SD1541-01 PDF даташит
Спецификация SD1541-01 изготовлена «ST Microelectronics» и имеет функцию, называемую «RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS». |
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Детали детали
Номер произв | SD1541-01 |
Описание | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
Производители | ST Microelectronics |
логотип |
5 Pages
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SD1541-01
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
. DESIGNED FOR HIGH POWER PULSED
IFF AND DME APPLICATIONS
. 400 (min.) DME 1025 - 1150 MHz
. 6.5 dB MIN. GAIN
. REFRACTORY GOLD METALLIZATION
. EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
. 30:1 LOAD VSWR CAPABILITY AT
SPECIFICIED OPERATING CONDITIONS
. INPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATION
.400 x .500 2LFL (M112)
hermetically sealed
ORDER CODE
B RA ND IN G
SD1541-01
SD1541-1
PIN CONNECTION
DESCRIPTION
The SD1541-01 is a hermetically sealed, gold me-
tallized, silicon NPN power transistor. The SD1541-
01 is designed for applications requiring high peak
power and low duty cycles such as DME. The
SD1541-01 is packaged in a hermetic metal/ce-
ramic package with internal input/output matching,
resulting in improved broadband performance and
a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Device Current
PDISS
Power Dissipation
TJ
TSTG
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
65
65
3.5
22
1458
+200
− 65 to +150
Unit
V
V
V
A
W
°C
°C
0.12
°C/W
1/5
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SD1541-01
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVCES
BVEBO
ICES
hFE
IC = 25mA
IC = 50mA
IE = 10mA
VCE = 50V
VCE = 5V
IE = 0mA
VBE = 0V
IC = 0mA
IE = 0mA
IC = .25A
Min.
65
65
3.5
—
5
Va l u e
Typ. Max.
——
——
——
— 25
— 200
Unit
V
V
V
mA
—
DYNAMIC
S ymb o l
Test Conditions
POUT f = 1025 — 1150MHz PIN = 90 W
VCE = 50 V
GP f = 1025 — 1150MHz PIN = 90 W
VCE = 50 V
N ot e:
Pulse W idth = 10µSec, Duty Cycle = 1%
This device i s sui table f or use under other pulse widt h/duty cycle condit ions.
Please contact the factory for specific applications assistance.
TYPICAL PERFORMANCE
Value
Min. Typ. Max.
400 — —
6.5 — —
Unit
W
dB
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/5
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IMPEDANCE DATA
FREQ.
1020 MHz
1090 MHz
1150 MHz
ZIN (Ω)
2.898 + j 4.1
2.325 + j 3.4
1.994 + j 2.8
ZCL (Ω)
1.382 − j 3.2
1.338 − j 2.8
1.269 − j 2.5
TEST CIRCUIT
SD1541-01
All Dimensions in Inches Unless Otherwise specified
C1 :
C2, C3,
C4 :
C5 :
0.4 - 2.5pF Johanson Gigatrim
0.6 - 4.5pF Johanson Gigatrim
82pF Chip Capacitor, .055 Sq.
L1 : Loop, #18 Tinned, .36 Wide x .27 above Circuit
L2 : 4 3/4 Turns, #24 En., C.W., .075 I.D.
Z3 : 50Ω .020 x .330; C1 tapped .15 from Load
Z4 : .145 x .920
Z5 : .325 x .180
Z6 : .730 x .315
Z7 : .710 x .425 with .140 x .150 cutout
Z8 : .35 x .780; C4 Tapped .36 from Cen
Z9 : 50Ω
C1, C4 : Cold End Terminated Through Eyelet.
Z1 : 50Ω(.02 Wide)
Z2 : .250 x .120
3/5
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