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GS820E32A PDF даташит

Спецификация GS820E32A изготовлена ​​​​«GSI Technology» и имеет функцию, называемую «64K x 32 / 2M Synchronous Burst SRAM».

Детали детали

Номер произв GS820E32A
Описание 64K x 32 / 2M Synchronous Burst SRAM
Производители GSI Technology
логотип GSI Technology логотип 

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GS820E32A Даташит, Описание, Даташиты
GS820E32AT/Q-150/138/133/117/100/66
TQFP, QFP
Commercial Temp
Industrial Temp
64K x 32
2M Synchronous Burst SRAM
150Mhz - 66Mhz
9ns - 18ns
3.3V VDD
3.3V & 2.5V I/O
Features
• FT pin for user configurable flow through or pipelined operation.
• Dual Cycle Deselect (DCD) Operation.
• 3.3V +10%/-5% Core power supply
• 2.5V or 3.3V I/O supply.
• LBO pin for linear or interleaved burst mode.
• Internal input resistors on mode pins allow floating mode pins.
• Default to Interleaved Pipelined Mode.
• Byte write (BW) and/or global write (GW) operation.
• Common data inputs and data outputs.
• Clock Control, registered, address, data, and control.
• Internal Self-Timed Write cycle.
• Automatic power-down for portable applications.
• JEDEC standard 100-lead TQFP or QFP package.
-150 -138 -133 -117 -100 -66
Pipeline tCycle 6.6ns 7.25ns 7.5ns 8.5ns 10ns 12.5ns
3-1-1-1 tKQ 3.8ns 4ns 4ns 4.5 5ns 6ns
IDD 270mA 245mA 240mA 210mA 180mA 150mA
Flow tCycle 10.5ns 15ns 15ns 15ns 15ns 20ns
Through tKQ 9ns 9.7ns 10ns 11ns 12ns 18ns
2-1-1-1 IDD 170mA 120mA 120mA 120mA 120mA 95mA
Functional Description
Applications
The GS820E32A is a 2,097,152 bit high performance synchronous
SRAM with a 2 bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPU’s, the device now finds application in synchronous
SRAM applications ranging from DSP main store to networking chip
set support.
Controls
Addresses, data I/O’s, chip enables (E1, E2, E3), address burst control
inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive edge triggered clock
input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or interleave order
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Flow Through / Pipeline Reads
The function of the Data Output register can be controlled by the user
via the FT mode pin/bump (Pin 14 in the TQFP, bump 1F in the FP-
BGA). Holding the FT mode pin/bump low, places the RAM in Flow
through mode, causing output data to bypass the Data Output
Register. Holding FT high places the RAM in Pipelined Mode,
activating the rising edge triggered Data Output Register.
DCD Pipelined Reads
The GS820E32A is a DCD (Dual Cycle Deselect) pipelined
synchronous SRAM. SCD (Single Cycle Deselect) versions are also
available. DCD SRAMs pipeline disable commands to the same
degree as read commands. DCD RAMs hold the deselect command
for one full cycle and then begin turning off their outputs just after the
second rising edge of clock.
Byte Write and Global Write
Byte write operation is performed by using byte write enable (BW)
input combined with one or more individual byte write signals (Bx). In
addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Core and Interface Voltages
The GS820E32A operates on a 3.3V power supply and all inputs/
outputs are 3.3V and 2.5V compatible. Separate output power (VDDQ)
pins are used to de-couple output noise from the internal circuit.
Rev: 1.04 3/2000
1/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
E









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GS820E32A Даташит, Описание, Даташиты
GS820E32A 100 Pin TQFP and QFP Pinout
GS820E32AT/Q-150/138/133/117/100/66
NC
DQC8
DQC7
VDDQ
VSS
DQC6
DQC5
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
FT
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
DQD6
VSS
VDDQ
DQD7
DQD8
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 80
2 79
3 78
4 77
5 76
6 75
7 74
8 73
9
10
64K x 32
11 Top View
72
71
70
12 69
13 68
14 67
15 66
16 65
17 64
18 63
19 62
20 61
21 60
22 59
23 58
24 57
25 56
26 55
27 54
28 53
29 52
30 51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
DQB8
DQB7
VDDQ
VSS
DQB6
DQB5
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
DQA5
DQA6
VSS
VDDQ
DQA7
DQA8
NC
Rev: 1.04 3/2000
2/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
E









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GS820E32A Даташит, Описание, Даташиты
TQFP Pin Description
Pin Location
37, 36
35, 34, 33, 32, 100, 99, 82, 81, 44, 45,
46, 47, 48, 49
52, 53, 56, 57, 58, 59, 62, 63
68, 69, 72, 73, 74, 75, 78, 79
2, 3, 6, 7, 8, 9, 12, 13
18, 19, 22, 23, 24, 25, 28, 29
16, 38, 39, 42, 43, 66, 50, 51, 80, 1, 30
87
93, 94
95, 96
89
88
98, 92
97
86
83
84, 85
64
14
31
15, 41, 65, 91
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
4, 11, 20, 27, 54, 61, 70, 77
Symbol
A0, A1
A2-15
DQA1-DQA8
DQB1-DQB8
DQC1-DQC8
DQD1-DQD8
NC
BW
BA, BB
BC, BD
CK
GW
E1, E3
E2
G
ADV
ADSP, ADSC
ZZ
FT
LBO
VDD
VSS
VDDQ
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
GS820E32AT/Q-150/138/133/117/100/66
Description
Address field LSB’s and Address Counter preset Inputs
Address Inputs
Data Input and Output pins.
No Connect
Byte Write. Writes all enabled bytes. Active Low.
Byte Write Enable for DQA, DQB Data I/O’s. Active Low.
Byte Write Enable for DQC, DQD Data I/O’s. Active Low.
Clock Input Signal. Active High.
Global Write Enable. Writes all bytes. Active Low.
Chip Enable. Active Low.
Chip Enable. Active High.
Output Enable. Active Low.
Burst address counter advance enable. Active Low.
Address Strobe (Processor, Cache Controller). Active Low.
Sleep Mode control. Active High.
Flow Through or Pipeline mode. Active Low.
Linear Burst Order mode. Active Low.
Core power supply.
I/O and Core Ground.
Output driver power supply.
E
Rev: 1.04 3/2000
3/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, Giga Semiconductor, Inc.
E










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