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OPA860 PDF даташит

Спецификация OPA860 изготовлена ​​​​«Burr-Brown Corporation» и имеет функцию, называемую «Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA) and BUFFER».

Детали детали

Номер произв OPA860
Описание Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA) and BUFFER
Производители Burr-Brown Corporation
логотип Burr-Brown Corporation логотип 

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OPA860 Даташит, Описание, Даташиты
BurrĆBrown Products
from Texas Instruments
OPA860
Wide Bandwidth
OPERATIONAL TRANSCONDUCTANCE
AMPLIFIER (OTA) and BUFFER
SBOS331 – JUNE 2005
OTA FEATURES
Wide Bandwidth (80MHz, Open-Loop, G = +5)
High Slew Rate (900V/µs)
High Transconductance (95mA/V)
External IQ-Control
BUFFER FEATURES
Closed-Loop Buffer
Wide Bandwidth (1600MHz, VO = 1VPP)
High Slew Rate (4000V/µs)
60mA Output Current
OPA860 FEATURES
Low Quiescent Current (11.2mA)
Versatile Circuit Function
APPLICATIONS
Baseline Restore Circuits
Video/Broadcast Equipment
Communications Equipment
High-Speed Data Acquisition
Wideband LED Driver
AGC-Multiplier
ns-Pulse Integrator
Control Loop Amplifier
OPA660 Upgrade
DESCRIPTION
The OPA860 is a versatile monolithic component
designed for wide-bandwidth systems, including high
performance video, RF and IF circuitry. It includes a
wideband, bipolar operational transconductance
amplifier (OTA), and voltage buffer amplifier.
The OTA or voltage-controlled current source can be
viewed as an ideal transistor. Like a transistor, it has
three terminals—a high impedance input (base), a
low-impedance input/output (emitter), and the current
output (collector). The OTA, however, is self-biased
and bipolar. The output collector current is zero for a
zero base-emitter voltage. AC inputs centered about
zero produce an output current, which is bipolar and
centered about zero. The transconductance of the
OTA can be adjusted with an external resistor,
allowing bandwidth, quiescent current, and gain
trade-offs to be optimized.
Also included in the OPA860 is an uncommited
closed-loop, unity-gain buffer. This provides
1600MHz bandwidth and 4000V/µs slew rate.
Used as a basic building block, the OPA860 sim-
plifies the design of AGC amplifiers, LED driver
circuits for fiber optic transmission, integrators for fast
pulses, fast control loop amplifiers and control ampli-
fiers for capacitive sensors and active filters. The
OPA860 is available in an SO-8 surface-mount pack-
age.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005, Texas Instruments Incorporated









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OPA860 Даташит, Описание, Даташиты
OPA860
SBOS331 – JUNE 2005
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
ORDERING INFORMATION(1)
PRODUCT
OPA860
PACKAGE
SO-8
PACKAGE
DESIGNATOR
D
SPECIFIED
TEMPERATURE
RANGE
–45°C to +85°C
PACKAGE
MARKING
OPA860
ORDERING
NUMBER
OPA860ID
OPA860IDR
TRANSPORT MEDIA,
QUANTITY
Rails, 75
Tape and Reel, 2500
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
Power Supply
Internal Power Dissipation
Differential Input Voltage
Input Common-Mode Voltage Range
Storage Temperature Range: D
Lead Temperature (soldering, 10s)
Junction Temperature (TJ)
ESD Rating:
Human Body Model (HBM)(2)
Charge Device Model (CDM)
±6.5VDC
See Thermal Information
±1.2V
±VS
–40°C to +125°C
+300°C
+150°C
1500V
1000V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress Ratings only, and functional operations of the device at these and any other conditions
beyond those specified is not supported.
(2) Pin 2 > 500V HBM.
PIN CONFIGURATION
Top View
SO
IQ Adjust 1
E2
B3
V= 5V 4
8C
7 V+ = +5V
+1 6 Out
5 In
2









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OPA860 Даташит, Описание, Даташиты
OPA860
www.ti.com
SBOS331 – JUNE 2005
ELECTRICAL CHARACTERISTICS: VS = ±5V
RL = 500and RADJ = 250, unless otherwise noted.
TYP
PARAMETER
CONDITIONS
Closed Loop OTA + BUFFER (see Figure 53)
AC PERFORMANCE
G = +2, See Figure 53
Bandwidth
Bandwidth for 0.1dB Gain Flatness
Slew Rate
Rise Time and Fall Time
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
OTA - Open-Loop (see Figure 48)
VO = 200mVPP
VO = 1VPP
VO = 5VPP
VO = 200mVPP
VO = 5V Step
VO = 1V Step
G = +2, VO = 2VPP, 5MHz
RL = 100
RL = 500
RL = 100
RL = 500
AC PERFORMANCE
Bandwidth
Slew Rate
Rise Time and Fall Time
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Base Input Voltage Noise
G = +5, VO = 200mVPP,
RL = 500
G = +5, VO = 1VPP
G = +5, VO = 5VPP
G = +5, VO = 5V Step
VO = 1V Step
G = +5, VO = 2VPP, 5MHz
RL = 500
RL = 500
f > 100kHz
Base Input Current Noise
f > 100kHz
Emitter Input Current Noise
f > 100kHz
OTA DC PERFORMANCE(4) (see Figure 48)
Min OTA Transconductance
Max OTA Transconductance
B-Input Offset Voltage
Average B-Input Offset Voltage Drift
B-Input Bias Current
Average B-Input Bias Current Drift
E-Input Bias Current
Average E-Input Bias Current Drift
C-Output Bias Current
Average C-Output Bias Current Drift
OTA INPUT (see Figure 48)
VO = ±10mV, RC = 0, RE = 0
VO = ±10mV, RC = 0, RE = 0
VB = 0V, RC = 0, RE = 100
VB = 0V, RC = 0, RE = 100
VB = 0V, RC = 0, RE = 100
VB = 0V, RC = 0, RE = 100
VB = 0V, VC = 0V
VB = 0V, VC = 0V
VB = 0V, VC = 0V
VB = 0V, VC = 0V
B-Input Voltage Range
B-Input Impedance
Min E-Input Input Resistance
Max E-Input Input Resistance
+25°C
470
470
350
42
3500
0.7
–54
–77
–66
–79
80
80
80
900
4.4
–68
–57
2.4
1.65
5.2
95
95
±3
±3
±1
±30
±5
±4.2
455 || 2.1
10.5
10.5
OPA860ID
MIN/MAX OVER TEMPERATURE
+25°C (2)
0°C to
70°C (3)
–40°C to
+85°C (3)
380 375 370
3000
2800
2700
77 75 74
860
–55
–52
3.0
2.4
15.3
80
150
±12
±5
±100
±18
±3.7
12.5
6.7
850
–54
–51
3.3
2.45
16.6
77
155
±15
±67
±6
±20
±125
±500
±30
±250
±3.6
13.0
6.5
840
–53
–49
3.4
2.5
17.5
75
160
±20
±120
±6.6
±25
±140
±600
±38
±300
±3.6
13.3
6.3
UNITS
MHz
MHz
MHz
MHz
V/µs
ns
dBc
dBc
dBc
dBc
MHz
MHz
MHz
V/µs
ns
dB
dB
nV/Hz
pA/Hz
pA/Hz
mA/V
mA/V
mV
µV/°C
µA
nA/°C
µA
nA/°C
µA
nA/°C
V
k|| pF
MIN/
MAX
min
typ
typ
typ
typ
typ
typ
typ
typ
typ
min
typ
typ
min
typ
max
max
max
max
max
min
min
max
max
max
max
max
max
max
max
min
typ
min
max
TEST
LEVEL (1)
B
C
C
C
C
C
C
C
C
C
B
C
C
B
C
B
B
B
B
B
A
A
A
B
A
B
A
B
A
B
B
C
B
B
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for 25°C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 8°C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node. VCM is the input common-mode voltage.
3










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