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NLSF3T125 Datasheet Download - ON Semiconductor

Номер произв NLSF3T125
Описание Quad Bus Buffer
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NLSF3T125 Даташит, Описание, Даташиты
NLSF3T125
Quad Bus Buffer
with 3−State Control Inputs
The NLSF3T125 is a high speed CMOS quad bus buffer fabricated
with silicon gate CMOS technology. It achieves high speed operation
similar to equivalent Bipolar Schottky TTL while maintaining CMOS
low power dissipation.
The NLSF3T125 requires the 3−state control input (OE) to be set
High to place the output into the high impedance state.
The T125 inputs are compatible with TTL levels. This device can be
used as a level converter for interfacing 3.3 V to 5.0 V, because it has
full 5.0 V CMOS level output swings.
The NLSF3T125 input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when VCC = 0 V. These
input and output structures help prevent device destruction caused by
supply voltage − input/output voltage mismatch, battery backup, hot
insertion, etc.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 4.0 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: Human Body Model; > 2000 V,
Machine Model; > 200 V
Chip Complexity: 72 FETs or 18 Equivalent Gates
Active−Low Output Enables
A1 16
OE1 15
1
Y1
A2 4
OE2 3
5
Y2
A3 8
OE3 9
7 Y3
A4 12
10
Y4
OE4 13
Figure 1. Logic Diagram
FUNCTION TABLE
NLSF3T125
Inputs Output
A OE Y
HL
LL
XH
H
L
Z
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 2
1
http://onsemi.com
QFN−16
CASE 485G
MARKING
DIAGRAM
16
1
XXX
ALYW
(Top View)
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package Shipping
NLSF3T125MNR2
QFN−16
3000 Units/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
.
Publication Order Number:
NLSF3T125/D







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NLSF3T125 Даташит, Описание, Даташиты
NLSF3T125
A1 OE1 VCC OE4
16 15 14 13
Exposed Pad (EP)
Y1 1
NC 2
OE2 3
A2 4
12 A4
11 NC
10 Y4
9 OE3
56 7
Y2 GND Y3
8
A3
Figure 2. QFN − 16 Pinout (Top View)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DC Supply Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin DC Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout DC Output Voltage
– 0.5 to + 7.0
– 0.5 to + 7.0
Output in 3−State – 0.5 to + 7.0
High or Low State – 0.5 to VCC + 0.5
V
V
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIIK Input Diode Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOK Output Diode Current (VOUT < GND; VOUT > VCC)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIout DC Output Current, per Pin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC DC Supply Current, VCC and GND Pins
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD Power Dissipation in Still Air,
QFN Packages
− 20
± 20
± 25
± 75
500
mA
mA
mA
mA
mW
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg Storage Temperature
– 65 to + 150
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected. Functional operation
should be restricted to the Recommended Operating Conditions.
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DCSupplyVoltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin DCInputVoltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout DCOutputVoltage
Output in 3−State
High or Low State
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA Operating Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtr,tf InputRiseandFallTime
VCC = 5.0 V ±0.5 V
Min
2.0
0
0
0
− 40
0
Max
5.5
5.5
5.5
VCC
+ 85
20
Unit
V
V
V
°C
ns/V
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NLSF3T125 Даташит, Описание, Даташиты
NLSF3T125
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol Parameter
Test Conditions
VCC
(V)
TA = 25°C
Min Typ Max
TA 85°C
Min Max
TA 125°C
Min Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIH Minimum
High−Level
2.3 V ± 0.3 V
3.3 V ± 0.3 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Voltage 5.0V±0.5V
0.5 VCC
0.4 VCC
0.44 VCC
0.5 VCC
0.4 VCC
0.44 VCC
0.5 VCC
0.4 VCC
0.44 VCC
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIL Maximum
Low−Level
2.3 V ± 0.3 V
3.3 V ± 0.3 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Voltage 5.0V±0.5V
0.3 VCC
0.18 VCC
0.18 VCC
0.3 VCC
0.18 VCC
0.18 VCC
0.3 VCC
0.18 VCC
0.18 VCC
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOH Minimum
VOL @ IOL, 50 mA 2.0
High−Level
VIN = VIH or VIL
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Voltage IOH =−50mA
4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIN = VIH or VIL VIN = VIH or VIL
IOH = − 2.0 mA
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOH = − 4.0 mA
3.0
IOH = − 8.0 mA
4.5
1.9
2.9
4.4
1.82
2.58
3.94
2.0
3.0
4.5
1.9
2.9
4.4
1.72
2.48
3.80
1.9 V
2.9
4.4
1.60
2.34
3.66
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOL Maximum
VOL @ IOL, 50 mA 2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLow−Level
VIN = VIH or VIL
3.0
Output Voltage IOL = 50 mA
4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIN = VIH or VIL VIN = VIH or VIL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOL = 2.0 mA
2.0
IOL = 4.0 mA
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOL = 8.0 mA
4.5
0.0 0.1
0.0 0.1
0.0 0.1
0.36
0.36
0.36
0.1
0.1
0.1
0.44
0.44
0.44
0.1 V
0.1
0.1
0.52
0.52
0.52
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIIN Maximum
VIN = 5.5 V or GND 0
Input Leakage
to
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent
5.5
± 0.1
± 1.0
± 1.0 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC Maximum
Quiescent
VIN = VCC or GND 5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSupply Current
2.0 20 40 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICCT
Quiescent
Supply
Current
Input: VIN = 3.4 V
5.5
1.35 1.50 1.65 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOZ Maximum
3−State
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent
VIN = VIH or VIL
5.5
VOUT = VCC or GND
±0.25
±2.5
±2.5 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOPD
Output
Leakage
Current
VOUT = 5.5 V
0.0
0.5 5.0 10 mA
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