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NE71300 PDF даташит

Спецификация NE71300 изготовлена ​​​​«NEC» и имеет функцию, называемую «LOW NOISE L TO K-BAND GaAs MESFET».

Детали детали

Номер произв NE71300
Описание LOW NOISE L TO K-BAND GaAs MESFET
Производители NEC
логотип NEC логотип 

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NE71300 Даташит, Описание, Даташиты
LOW NOISE NE71300
L TO K-BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN
GA = 9.5 dB TYP at f = 12 GHz
• LG = 0.3 µm, WG = 280 µm
• EPITAXIAL TECHNOLOGY
• LOW PHASE NOISE
DESCRIPTION
The NE71300 features a low noise figure and high associ-
ated gain through K-band by employing a recessed 0.3 micron
gate and triple epitaxial technology. The active area of the
chip is covered with Si02 and Si3N4 for scratch protection as
well as surface stability. This device is suitable for both
amplifier and oscillator applications in the consumer and
industrial markets.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
VDS = 3 V, IDS = 10 mA
3 24
2.5 21
2
GA
1.5
18
15
1
NF
0.5
12
9
0
1
2
6
10 20 30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NFOPT1
GA1
P1dB
IDSS
VP
gm
IGSO
RTH (CH-C)2
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Optimum Noise Figure, VDS = 3 V, IDS = 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, VDS = 3 V, IDS = 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Compression, VDS = 3 V, IDs = 30 mA,
f =12 GHz
Saturated Drain Current, VDS = 3 V, VGS = 0
Pinch-Off Voltage, VDS = 3 V, IDS = 0.1 mA
Transconductance, VDS = 3 V, IDS = 10 mA
Gate to Source Leakage Current at VGS = -5 V
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
mA
V
mS
µA
°C/W
NE71300
00 (CHIP)
MIN TYP
0.6
1.6
11.5 14.0
8.5 9.5
14.5
20 40
-3.5 -1.1
20 50
1.0
MAX
0.7
1.8
120
-0.5
10
190
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories









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NE71300 Даташит, Описание, Даташиты
NE71300
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Drain to Source Voltage V
5
VGD Gate to Drain Voltage
V
-6
VGS Gate to Source Voltage
V
-5
IDS Drain Current
mA IDSS
PIN RF Input (CW)
dBm
+15
TCH Channel Temperature
°C
175
TSTG
Storage Temperature
°C -65 to +175
PT2
Total Power Dissipation
mW
400
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. With chip mounted on a copper heat sink.
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
POWER DERATING CURVE
400
300
200
100
0 50 100 150 200
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
VDS = 3 V
40
30
20
10
0
-2.0
-1.0
Gate to Source Voltage, VGS (V)
0
DC PERFORMANCE
VGS = 0 V
40
-0.2 V
30
20
-0.4 V
10
-0.6 V
0 12 3 45
Drain Voltage, VDS (V)









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NE71300 Даташит, Описание, Даташиты
TYPICAL SCATTERING PARAMETERS1
NE71300
.4
.2
0 .2
-.2
-.4
.8 1
.6
1.5
2
S11
26 GHz
S22
26 GHz
3
4
5
10
20
.4 .6 .8 1 1.5 2 3 4 5 10 20
S11
0.5 GHz
S22 -20
0.5 GHz
-10
-5
-4
-3
-.6
-.8 -1
-2
-1.5
Coordinates in Ohms
Frequency in GHz
(VDS = 2 V, ID = 10 mA)
135˚
S21
180˚ 0.5 GHz
225˚
90˚
45˚
S12
0.5 GHz
0.05 0.10
0.50
S21
26 GHz 1.00
1.50
S12
26 GHz
0.15
2.00
2.50
3.00
270˚
315˚
NE71300
VDS = 2 V, ID = 10 mA
FREQUENCY
(GHz)
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
S11
MAG
ANG
0.998
0.995
0.982
0.959
0.928
0.895
0.852
0.817
0.762
0.736
0.713
0.702
0.687
0.682
0.675
0.674
0.676
0.673
0.666
0.664
0.656
0.658
0.654
0.646
0.660
0.670
0.681
-7.5
-15.0
-29.9
-44.4
-58.8
-72.7
-86.5
-100.5
-113.5
-126.3
-139.6
-153.1
-166.7
-179.1
169.7
160.4
152.0
144.9
138.2
132.5
126.5
119.6
113.6
107.2
100.7
94.7
89.6
S21
MAG
ANG
2.931
2.922
2.882
2.823
2.703
2.652
2.470
2.384
2.248
2.108
2.046
1.911
1.842
1.710
1.618
1.501
1.391
1.315
1.248
1.112
1.101
0.995
0.933
0.882
0.783
0.760
0.675
172.9
165.9
152.1
138.0
124.6
111.2
97.9
86.2
73.2
63.8
51.1
40.7
29.2
17.8
8.2
-2.5
-10.4
-19.8
-31.4
-36.3
-45.1
-51.5
-63.7
-71.0
-77.6
-86.4
-91.4
S12
MAG
0.013
0.026
0.052
0.075
0.097
0.113
0.128
0.141
0.141
0.147
0.155
0.159
0.156
0.142
0.139
0.138
0.145
0.149
0.161
0.174
0.160
0.137
0.097
0.099
0.098
0.111
0.130
ANG
84.6
79.9
69.1
59.1
48.8
38.4
28.8
18.8
8.9
2.4
-4.9
-14.4
-24.5
-27.6
-31.9
-32.3
-37.8
-39.2
-42.3
-51.1
-65.9
-80.3
-76.0
-68.6
-60.6
-57.8
-57.9
S22
MAG ANG
0.602
0.600
0.593
0.581
0.563
0.541
0.506
0.472
0.426
0.396
0.368
0.342
0.317
0.298
0.295
0.300
0.309
0.326
0.340
0.359
0.369
0.371
0.369
0.373
0.385
0.411
0.446
-5.5
-10.8
-21.4
-31.6
-41.6
-51.6
-61.2
-71.0
-78.5
-87.2
-97.7
-109.8
-124.7
-139.0
-153.3
-165.9
-175.7
175.3
167.6
160.7
152.0
142.4
133.3
123.2
113.3
103.3
94.5
K
0.047
0.063
0.127
0.201
0.277
0.352
0.447
0.509
0.677
0.729
0.767
0.810
0.874
0.999
1.065
1.126
1.128
1.138
1.112
1.132
1.274
1.659
2.561
2.679
2.919
2.495
2.220
MAG2
(dB)
23.531
20.507
17.437
15.756
14.451
13.705
12.855
12.281
12.026
11.566
11.206
10.799
10.722
10.807
9.101
8.207
7.642
7.198
6.860
5.846
5.230
3.865
2.913
2.369
1.496
1.561
0.919
Notes:
1. S-parameters include bond wires.
Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 µm) long each wire.
Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 µm) long each wire.
Source:Total 4 wire (s), 2 per side, 0.0186" (472 µm) long each wire.
Wire: 0.0007" (17.8 µm) Diameter, Gold.
2. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | | 2 - |S11| 2 - |S22| 2 , = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain










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