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74V2T241 PDF даташит

Спецификация 74V2T241 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «DUAL BUS BUFFER NON INVERTED (3-STATE)».

Детали детали

Номер произв 74V2T241
Описание DUAL BUS BUFFER NON INVERTED (3-STATE)
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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74V2T241 Даташит, Описание, Даташиты
74V2T241
DUAL BUS BUFFER NON INVERTED (3-STATE)
s HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA = 25°C
s POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
s COMPATIBLE WITH TTL LEVEL:
VIH=2.0V(MIN), VIL=0.8V(MAX)
s SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8mA (MIN) at VCC = 4.5V
s BALANCED PROPAGATION DELAYS:
tPLH tPHL
s OPERATING VOLTAGE RANGE:
VCC(OPR) = 4.5V to 5.5V
s IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T241 is an advanced high-speed CMOS
DUAL BUS BUFFER NON INVERTER fabricated
with sub-micron silicon gate and double-layer
metal wiring C2MOS technology.
It has one active-high and one active-low output
enable. Power down protection is provided on all
SOT23-8L
ORDER CODES
PACKAGE
SOT23-8L
T&R
74V2T241STR
inputs and outputs and 0 to 7V can be accepted
on inputs with no regard to the supply voltage.
This device can be used to interface 5V to 3V
systems and it is ideal for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2003
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74V2T241 Даташит, Описание, Даташиты
74V2T241
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1, 7
2, 5
3, 6
4
8
SYMBOL
1G, 2G
1A, 2A
2Y, 1Y
GND
VCC
NAME AND FUNCTION
Output Enable Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
1G
L
L
H
X: "H" or "L"
Z: High Impedance
2G
H
H
L
A
L
H
X
Y
L
H
Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC Supply Voltage
-0.5 to +7.0
V
VI DC Input Voltage
-0.5 to +7.0
V
VO DC Output Voltage (see note 1)
-0.5 to +7.0
V
VO DC Output Voltage (see note 2)
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
20
mA
IOK DC Output Diode Current
20
mA
IO DC Output Current
± 25
mA
ICC or IGND DC VCC or Ground Current
± 50
mA
Tstg Storage Temperature
-65 to +150
°C
TL Lead Temperature (10 sec)
260 °C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) VCC=0V or nG=VCC(Output in High Impedance state)
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC Supply Voltage
VI Input Voltage
VO Output Voltage (see note 1)
VO Output Voltage (see note 2)
Top Operating Temperature
dt/dv Input Rise and Fall Time (note 3)
1) VCC=0V or Output in High Impedance state
2) High or Low State
3) VIN from 0.8 to 2.0V
(VCC = 5.0 ± 0.5V)
Value
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to VCC
-55 to 125
0 to 20
Unit
V
V
V
V
°C
ns/V
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74V2T241 Даташит, Описание, Даташиты
74V2T241
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
VCC
(V)
VIH
VIL
VOH
VOL
IOZ
II
IOPD
ICC
High Level Input
Voltage
4.5 to
5.5
Low Level Input
Voltage
4.5 to
5.5
High Level Output
Voltage
4.5
4.5
Low Level Output
Voltage
4.5
4.5
High Impedance
Output Leakage
Current
5.5
Input Leakage
Current
0 to
5.5
Power down Output
Leakage Current
0
Quiescent Supply
Current
5.5
IO=-50 µA
IO=-8 mA
IO=50 µA
IO=8 mA
VI = VIH or VIL
VO = 5.5 or GND
VI = 5.5V or GND
VO = 5.5
VI = VCC or GND
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
0.8
0.8 0.8
V
2.0 2.0 2.0
4.4 4.5 4.4 4.4
3.94 3.8 3.7
0.0 0.1 0.1 0.1
0.36 0.44 0.44
V
V
V
±0.25
± 2.5
± 2.5 µA
± 0.1
0.5
1
±1
5
10
± 1 µA
10 µA
10 µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition
Value
Symbol
Parameter
VCC CL
(V) (pF)
tPLH Propagation Delay
tPHL Time
tPLZ
tPHZ
Output Disable
Time
tPZL
tPZH
Output Enable
Time
(**) Voltage range is 5.0V ± 0.5V
5.0(**)
5.0(**)
5.0(**)
5.0(**)
5.0(**)
5.0(**)
15
50
15
50
15
50
RL = 1 K
RL = 1 K
RL = 1 K
RL = 1 K
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
3.8 5.5 1.0 6.5 1.0 7.5
ns
4.3 6.5 1.0 7.5 1.0 8.5
3.6 5.0 1.0 6.0 1.0 7.0
ns
5.1 7.0 1.0 8.0 1.0 9.0
3.7 5.9 1.0 7.0 1.0 8.0
ns
4.1 6.5 1.0 7.5 1.0 8.5
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
4 10 10 10 pF
COUT Output
Capacitance
6 pF
CPD Power Dissipation
Capacitance
(note 1)
14
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2
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Номер в каталогеОписаниеПроизводители
74V2T241DUAL BUS BUFFER NON INVERTED (3-STATE)ST Microelectronics
ST Microelectronics

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