|
|
Número de pieza | HM5116100 | |
Descripción | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM5116100 (archivo pdf) en la parte inferior de esta página. Total 24 Páginas | ||
No Preview Available ! HM5116100 Series
16 M FP DRAM (16-Mword × 1-bit)
4 k Refresh
ADE-203-646E (Z)
Rev. 5.0
Nov. 1997
Description
The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word × 1-bit. It employs the
most advanced 0.5µm CMOS technology for high performance and low power. The HM5116100 offers
Fast Page Mode as a high speed access mode. It is packaged in 26-pin plastic SOJ.
Features
• Single 5 V (±10%)
• Access time: 60 ns/70 ns (max)
• Power dissipation
Active mode: 440 mW/385 mW (max)
Standby mode 11 mW (max)
• Fast page mode capability
• Refresh cycles
4096 refresh cycles : 64 ms
• 3 variations of refresh
RAS-only refresh
CAS-before-RAS refresh
Hidden refresh
• Test function
16-bit parallel test mode
Ordering Information
Type No.
HM5116100S-6
HM5116100S-7
Access time
60 ns
70 ns
Package
300-mil 26-pin plastic SOJ (CP-26/24DB)
1 page HM5116100 Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
HM5116100
-6 -7
Parameter
Symbol Min Max Min Max Unit Test conditions
Operating current*1, *2
Standby current
ICC1 — 80 — 70 mA tRC = min
I CC2
—2
—2
mA TTL interface
RAS, CAS = VIH
Dout = High-Z
—1
—1
mA CMOS interface
RAS, CAS ≥ VCC – 0.2V
Dout = High-Z
RAS-only refresh current*2
Standby current*1
ICC3 — 80 — 70 mA tRC = min
I CC5
—5
—5
mA RAS = VIH, CAS = VIL
Dout = enable
CAS-before-RAS refresh current
Fast page mode current*1, *3
Input leakage current
Output leakage current
I CC6
I CC7
I LI
I LO
— 80 — 70 mA tRC = min
— 70 — 60 mA tPC = min
–10 10 –10 10 µA 0 V ≤ Vin ≤ 7 V
–10 10 –10 10 µA
0 V ≤ Vout ≤ 7 V
Dout = disable
Output high voltage
VOH
2.4 VCC 2.4 VCC V
High Iout = –5 mA
Output low voltage
VOL
0 0.4 0 0.4 V
Low Iout = 4.2 mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the
output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
Capacitance (Ta = 25°C, VCC = 5 V ± 10%)
Parameter
Symbol
Typ
Max
Unit Notes
Input capacitance (Address, Data-in)
CI1
—5
pF 1
Input capacitance (Clocks)
CI2
—7
pF 1
Output capacitance (Data-out)
CO
—7
pF 1, 2
Notes: 1. Capacitance measured with Booton Meter or effective capacitance measuring method.
2. CAS = VIH to disable Dout.
5
5 Page Timing Waveforms*18
Read Cycle
t RC
t RAS
RAS
t CSH
t RCD
tT
t RSH
t CAS
CAS
t ASR
t RAD
t RAH t ASC
t RAL
t CAL
t CAH
HM5116100 Series
t RP
t CRP
Address
WE
Dout
Row
Column
t RCS
t RRH
t RCH
t RAC
t CAC
t AA
t CLZ
t OH
t OFF
Dout
11
11 Page |
Páginas | Total 24 Páginas | |
PDF Descargar | [ Datasheet HM5116100.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM5116100 | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh | Hitachi Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |