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WCFS0808V1E PDF даташит

Спецификация WCFS0808V1E изготовлена ​​​​«Weida» и имеет функцию, называемую «32K x 8 3.3V Static RAM».

Детали детали

Номер произв WCFS0808V1E
Описание 32K x 8 3.3V Static RAM
Производители Weida
логотип Weida логотип 

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WCFS0808V1E Даташит, Описание, Даташиты
1WCFS0808V1E
WCFS0808V1E
Features
• Single 3.3V power supply
• Ideal for low-voltage cache memory applications
• High speed
— 12/15 ns
• Plastic SOJ and TSOP packaging
Functional Description
The WCFS0808V1E is a high-performance 3.3V CMOS Static
RAM organized as 32K words by 8 bits. Easy memory expan-
sion is provided by an active LOW Chip Enable (CE) and ac-
tive LOW Output Enable (OE) and three-state drivers. The de-
vice has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
Logic Block Diagram
AAAAAAAAAA1234567890
CE
WE
OE
INPUT BUFFER
32K x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
32K x 8 3.3V Static RAM
An active LOW Write Enable signal (WE) controls the writing/
reading operation of the memory. When CE and WE inputs are
both LOW, data on the eight data input/output pins (I/O0
through I/O7) is written into the memory location addressed by
the address present on the address pins (A0 through A14).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The WCFS0808V1E is available in 28-pin stan-
dard 300-mil-wide SOJ and TSOP Type I packages.
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Pin Configurations
SOJ
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 A4
25 A3
24 A2
23 A1
22 OE
21 A0
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (µA)
WCFS0808V1E 12ns
12
55
500
WCFS0808V1E 15ns
15
50
500
Document #: 38-05225 Rev. **
Revised February 11, 2002









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WCFS0808V1E Даташит, Описание, Даташиты
WCFS0808V1E
Pin Configuration
OE
A1
A2
AA34
WE
VCAAC56
A7
A8
AAA11019
22
23
24
25
26
27
28
1
2
3
4
5
6
7
TSOP
Top View
21 A0
20 CE
19
18
II//OO76
17
16
15
III///OOO543
14 GND
13 I/O2
12
11
10
9
IIAA//OO114310
8 A12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1].................................–0.5V to VCC + 0.5V
Electrical Characteristics Over the Operating Range[1]
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
VCC
3.3V ±300 mV
WCFS0808V1E 12ns
Parameter
Description
Test Conditions
Min.
Max.
VOH Output HIGH Voltage
VOL Output LOW Voltage
VIH Input HIGH Voltage
VIL Input LOW Voltage
IIX Input Load Current
IOZ Output Leakage
Current
VCC = Min., IOH = –2.0 mA
VCC = Min., IOL = 4.0 mA
GND VI VCC,
Output Disabled
2.4
2.2
–0.3
–1
–5
0.4
VCC +0.3V
0.8
+1
+5
IOS
Output Short
Circuit Current[2]
VCC = Max., VOUT = GND
–300
ICC VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
ISB1 Automatic CE Power-Down Max. VCC, CE VIH,
Current — TTL Inputs
VIN VIH, or VIN VIL,f = fMAX
ISB2
Automatic CE Power-Down
Current — CMOS Inputs[3]
Max. VCC, CE VCC – 0.3V, VIN VCC
0.3V, or VIN 0.3V,
WE VCC – 0.3V or WE 0.3V, f = fMAX
Notes:
1. Minimum voltage is equal to – 2.0V for pulse durations of less than 20 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
3. Device draws low standby current regardless of switching on the addresses.
55
5
500
Unit
V
V
V
V
µA
µA
mA
mA
mA
µA
Document #: 38-05225 Rev. **
Page 2 of 10









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WCFS0808V1E Даташит, Описание, Даташиты
WCFS0808V1E
Electrical Characteristics Over the Operating Range (continued)
Parameter
VOH
VOL
VIH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
VCC = Min., IOH = –2.0 mA
VCC = Min., IOL = 4.0 mA
VIL Input LOW Voltage
IIX Input Load Current
IOZ Output Leakage Current GND VI VCC,
Output Disabled
IOS
Output Short Circuit
Current[2]
VCC = Max., VOUT = GND
ICC VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
ISB1 Automatic CE Power-Down Max. VCC, CE VIH,
Current — TTL Inputs
VIN VIH, or VIN VIL,
f = fMAX
ISB2
Automatic CE Power-Down
Current — CMOS Inputs[3]
Max. VCC, CE VCC–0.3V, VIN VCC
0.3V, or VIN 0.3V,WEVCC–0.3V or WE
0.3V, f=fMAX
WCFS0808V1E 15ns
Min.
Max.
2.4
0.4
2.2 VCC
+0.3V
–0.3 0.8
–1 +1
–5 +5
–300
50
5
500
Unit
V
V
V
V
µA
µA
mA
mA
mA
µA
Capacitance[4]
Parameter
CIN: Addresses
CIN: Controls
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz, VCC = 3.3V
Max.
5
6
6
Unit
pF
pF
pF
AC Test Loads and Waveforms
3.3V
OUTPUT
R1 317
CL
INCLUDING
JIG AND
SCOPE
R2
351
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
167
1.73V
3.0V
GND
10%
3 ns
ALL INPUT PULSES
90%
90%
10%
3 ns
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05225 Rev. **
Page 3 of 10










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