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CPH3438 PDF даташит

Спецификация CPH3438 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «General-Purpose Switching Device Applications».

Детали детали

Номер произв CPH3438
Описание General-Purpose Switching Device Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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CPH3438 Даташит, Описание, Даташиты
Ordering number : ENN8128
CPH3438
CPH3438
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
30
±20
4.5
18
1.0
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : ZN
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
30
1.2
2.2
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
3.7 S
33 43 m
53 74 m
62 87 m
526 pF
79 pF
63 pF
11 ns
27 ns
50 ns
36 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1004PE TS IM TB-00000787 No.8128-1/4









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CPH3438 Даташит, Описание, Даташиты
CPH3438
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=10V, ID=4.5A
VDS=10V, VGS=10V, ID=4.5A
VDS=10V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0
Ratings
min typ max
Unit
11.3 nC
2.2 nC
2 nC
0.87
1.2 V
Package Dimensions
unit : mm
2152A
2.9
0.4
3
0.15
0.05
12
1.9
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=2A
RL=7.5
D VOUT
CPH3438
P.G 50S
ID -- VDS
4.5
4.0
3.5
3.0
2.5
2.0 3.0V
1.5
1.0
0.5 VGS=2.5V
0
0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Drain-to-Source Voltage, VDS -- V IT08404
RDS(on) -- VGS
200
Ta=25°C
180
160
140
ID=2A
120
1A
100
80
60
40
20
0
1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT08406
ID -- VGS
10
VDS=10V
8
6
4
2
0
012 345
Gate-to-Source Voltage, VGS -- V IT08405
RDS(on) -- Ta
100
90
80
70
60
IIDD==11AA, ,VVGGSS==44.0.5VV
50
40 ID=2A, VGS=10V
30
20
10
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08407
No.8128-2/4









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CPH3438 Даташит, Описание, Даташиты
CPH3438
10
7 VDS=10V
5
3
2
1.0
7
5
3
2
yfs-- ID
Ta= --25°7C5°C
25°C
0.1
0.01
1000
7
5
3
2
23
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
2 3 5 7 10
IT08408
VDD=15V
VGS=10V
100
7
td(off)
5 tf
3
2
td(on)
10
7 tr
5
3
2
1.0
0.01 2 3 5 7 0.1
2 3 5 7 1.0
10
VDS=10V
Drain Current, ID -- A
VGS -- Qg
9 ID=4.5A
23
5 7 10
IT08410
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12
Total Gate Charge, Qg -- nC
IT08412
PD -- Ta
1.2
10
7
5
VGS=0
3
2
IF -- VSD
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.2
1000
7
5
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Diode Forward Voltage, VSD -- V IT08409
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
100
7 Coss
5 Crss
3
2
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT08411
ASO
5
3
2
IDP=18A
10
7
5
ID=4.5A
3
2
1.0
7
5
3
2 Operation in this
<10µs
10ms1m10s0µs
DC ope1r0a0timons
0.1 area is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Drain-to-Source Voltage, VDS -- V IT08413
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08414
No.8128-3/4










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Номер в каталогеОписаниеПроизводители
CPH3430N-Channel Silicon MOSFETSanyo
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CPH3438General-Purpose Switching Device ApplicationsSanyo Semicon Device
Sanyo Semicon Device

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