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SD1730 PDF даташит

Спецификация SD1730 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS».

Детали детали

Номер произв SD1730
Описание RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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SD1730 Даташит, Описание, Даташиты
SD1730 (TH560)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
........OPTIMIZED FOR SSB
30 MHz
28 VOLTS
IMD 30dB
EFFICIENCY 40%
COMMON EMITTER
GOLD METALLIZATION
POUT = 220 W PEP WITH 12 dB GAIN
.500 4 LFL (M174)
epoxy sealed
ORDER CODE
SD1730
B RA ND IN G
TH560
PIN CONNECTION
DESCRIPTION
The SD1730 is a 28 V epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF
communications. The devices utlizes emitter bal-
lasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
September 7, 1994
1. Collector
2. Emitter
3. Base
4. Emitter
Value
70
35
4.0
16
320
+200
65 to +150
Unit
V
V
V
A
W
°C
°C
0.6 °C/W
1/6









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SD1730 Даташит, Описание, Даташиты
SD1730 (TH560)
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCES
BVCEO
BVEBO
ICEO
ICES
hFE
IC = 100 mA
IC = 200 mA
IE = 20 mA
VCE = 30 V
VCE = 35 V
VCE = 5 V
VBE = 0 V
IB = 0 mA
IC = 0 mA
IE = 0 mA
IE = 0 mA
IC = 7 A
Value
Min. Typ. Max.
70 — —
35 — —
4.0 — —
—— 5
—— 5
15 — 60
Unit
V
V
V
mA
mA
DYNAMIC
S ymb o l
Test Conditions
POUT f = 30 MHz
VCE = 28 V
PG*
IMD*
ηc*
COB
POUT = 220 W PEP
POUT = 220 W PEP
POUT = 220 W PEP
f = 1 MHz
VCE = 28 V
VCE = 28 V
VCE = 28 V
VCB = 28 V
Load POUT = 220 W PEP VCE = 28 V
Mismatch
Note: * f1 = 30.00 MHz, f2 = 30.001 MHz
TYPICAL PERFORMANCE
POWER OUTPUT PEP vs POWER INPUT
ICQ = 750 mA
ICQ = 750 mA
ICQ = 750 mA
ICQ = 750 mA
ICQ = 750 mA
V al u e
Unit
Min . Typ. Max.
220 — — W
12 — — dB
— — 30 dBc
40 — — %
— 450 — pF
:1 — VSWR
COLLECTOR EFFICIENCY vs POWER OUTPUT
PEP
2/6









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SD1730 Даташит, Описание, Даташиты
TYPICAL PERFORMANCE (cont’d)
SD1730 (TH560)
INTERMODULATION DISTORTION vs POWER OUTPUT PEP
POWER GAIN vs POWER OUTPUT
IMPEDANCE DATA
FREQ.
30 MHz
ZIN ()
ZCL ()
1.15 + j 0.41 1.25 + j 1.92
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