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PDF GFB50N03 Data sheet ( Hoja de datos )
| Número de pieza | GFB50N03 | |
| Descripción | N-Channel Enhancement-Mode MOSFET | |
| Fabricantes | Vishay Intertechnology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GFB50N03 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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GFB50N03
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 13mΩ ID 50A
D
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.160 (4.06)
0.190 (4.83)
0.21 (5.33)
Min.
D
0.320 (8.13)
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.045 (1.14)
0.055 (1.40)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
G
S
0.42
(10.66)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain Current(1)
VGS ±20
ID 50
Pulsed Drain Current
IDM 100
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
62.5
25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
2.0
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/1/01
1 page  
GFB50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
44
43 ID = 250µA
42
41
40
39
38
37
36
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 11 – Transient Thermal
Impedance
1
0.1
0.01
0.0001
1. Duty Cycle, D = t1/ t2
2. RθJA(t) = RθJA(norm) *RθJA
3. RθJA = 2.0°C/W
4. TJ -- TA = PDM* RθJA(t)
0.001
0.01
0.1
Pulse Duration (sec.)
1
10
Fig. 12 – Power vs. Pulse Duration
1000
Single Pulse
RθJA = 2.0°C/W
800 TC = 25°C
600
400
200
0
0.0001
0.001
0.01
0.1
Pulse Duration (sec.)
1
10
Fig. 13 – Maximum Safe Operating Area
1000
100
RDS(ON) Limit
10
VGS = 10V
Single Pulse
RθJC = 2.0°C/W
TA = 25°C
1
0.1 1
100ms
100µs
10ms1ms
DC
10
VDS -- Drain-Source Voltage (V)
100
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GFB50N03.PDF ] | |
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