(PDF) HAT2165H Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	HAT2165H
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! HAT2165H Silicon N Channel Power MOS FET Power Switching REJ03G0004-0500Z (Previous ADE-208-1632C (Z)) Rev.5.00 Apr.09.2003 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 D 5 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5 Drain Rev.5.00, Apr.09.2003, page 1 of 10 1 page HAT2165H Drain to Source Saturation Voltage vs. Gate to Source Voltage 250 Pulse Test 200 150 I D = 50 A 100 20 A 50 10 A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 VGS = 4.5 V 10 V 2 1 1 3 10 30 100 300 1000 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 8 Pulse Test 6 4 V GS = 4.5 V I D = 10 A, 20 A 50 A 2 10 V 10 A, 20 A, 50 A 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) 1000 Forward Transfer Admittance vs. Drain Current 300 100 Tc = -25°C 30 10 75°C 25°C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) Rev.5.00, Apr.09.2003, page 5 of 10 5 Page

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PDF HAT2165H Data sheet ( Hoja de datos )