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SD411 PDF даташит

Спецификация SD411 изготовлена ​​​​«Calogic» и имеет функцию, называемую «N-Channel Enhancement Mode Dual DMOS FET».

Детали детали

Номер произв SD411
Описание N-Channel Enhancement Mode Dual DMOS FET
Производители Calogic
логотип Calogic логотип 

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SD411 Даташит, Описание, Даташиты
N-Channel Enhancement Mode
Dual DMOS FET
CORPORATION
SD411
FEATURES
Normally "OFF" Configuration
High Speed Switching. . . . . . . . . . under 1 ns (typically)
Ultra Low Capacitance . . . . . . . . . ciss <3.5 pf (typically)
Tight Matching Characteristics
•• Pin Compatible to Industry Standard
Dual JFETs with Addition of Substrate Bias Pin
APPLICATIONS
Wideband Differential Amplifiers
Cascode Amplifiers
High Intercept Point Balanced Mixers
Oscillators
•• High Speed Analog Comparators
DESCRIPTION
The SD411 is constructed utilizing Calogic’s high speed
lateral DMOS techniques featuring tight matching
characteristics between each FET. This device is an excellent
choice for instrumentation, communication, RF and Video
designs.
ORDERING INFOMATION
Part Package
SD411 TO-78 Hermetic Package
XSD411 Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
PIN CONFIGURATION
TO-78
CD2
C
S2 D2
G1
G2
D1 S1
1 SOURCE 1
2 DRAIN 1
3 GATE 1
4 CASE/BODY
5 SOURCE 2
6 DRAIN 2
7 GATE 2
4
3
5
6
217
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SD411 Даташит, Описание, Даташиты
CORPORATION
SD411
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
VDS Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +20V
VSD Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +10V
VDB Drain-Body voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V
VSB Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +15V
VGD Gate-Drain Voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V
VGS Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +25V
VGB Gate-Body Voltage . . . . . . . . . . . . . . . . . . . . . . . . +25V
VG1G2 Gate-to-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . +25V
VD1D2 Drain-to-Drain Voltage . . . . . . . . . . . . . . . . . . . . . +20V
VS1S2 Source-to-Source Voltage . . . . . . . . . . . . . . . . . . +15V
ID Continuous Drain Current . . . . . . . . . . . . . . . . +50 mA
PD
PD
Tj
TS
TL
Device Dissipation (each side). . . . . . . . . . . . 360 mW
Derating Factor . . . . . . . . . . . . . . . . . . . . 2.88 mW/oC
Total Device Dissipation . . . . . . . . . . . . . . . . 500 mW
Derating Factor . . . . . . . . . . . . . . . . . . . . . . . 4 mW/oC
Operating Junction
Temperature Range . . . . . . . . . . . . . . . . -55 to +125oC
Storage Temperature Range . . . . . . . . . -55 to +150oC
Lead Temperature (1/16’ from mounting
surface for 10 sec.). . . . . . . . . . . . . . . . . . . . . . +260oC
ELECTRICAL CHARACTERISTICS(TA = +25oC per side unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP MAX
STATIC
BVDS
Drain Source Breakdown Voltage
20
BVSD
Source-Drain Breakdown Voltage
10
BVDB
Drain-Body Breakdown Voltage
25
BVSB
IDSX
IGBS
VGS(th)
rDS(ON)
DYNAMIC
Source-Body Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance (1)
15
0.7 10
1.0
0.5 1.0 2.0
70
gfs
Common-Source Forward Transconductance(1)
10
12
Ciss Common-Source Input Capacitance
Coss
Common-Source Output Capacitance
Crss Common Source Reverse Transfer Capacitance
C(gs + sb)
Source Node Capacitance
MATCH
| VGS1 - VGS2 | Differential Gate Source Voltage
| VGS1 - VDS2 | Differential Drift
T
NOTE 1: Pulse Test, 80sec, 1% Duty Cycle
3.5
1.2
0.3
4.5
25
25
UNITS
TEST CONDITIONS
V
nA
µA
V
ohms
ID = 10 nA, VGS = VBS = -5V
IS = 10 nA, VGD = VBD = -5V
ID = 10 nA, VGB = 0 Source
Open
IS = 10µA, VGB = 0 Drain Open
VDS = 20V, VGS = VBS = -5V
VGS = 25V, VDB = VSB = 0
ID = 1.0µA, VDS = VGS, VSB = 0
ID = 1.0mA, VGS = 5.0V, VSB = 0
mS
VDS = 10V, ID = 20mA, VSB = 0
f = 1KHZ
pF
VDS = 10V, VGS = VBS = 0
f = 1MHZ
mV
µV/ oC
VDS = 10V
ID = 5.0mA
VSB = 0
TA = -55oC to
+125Co










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