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CEP02N6 PDF даташит

Спецификация CEP02N6 изготовлена ​​​​«Chino-Excel Technology» и имеет функцию, называемую «N-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package».

Детали детали

Номер произв CEP02N6
Описание N-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package
Производители Chino-Excel Technology
логотип Chino-Excel Technology логотип 

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CEP02N6 Даташит, Описание, Даташиты
CEP02N6/CEB02N6
Sep. 2002
4 N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 2A , RDS(ON)=5@VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
D
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
-Pulsed
ID
IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperautre Range
PD
TJ, TSTG
Limit
600
Ć30
2
6
6
60
0.48
-55 to 150
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RӰJA
2.1
62.5
C/W
C/W
4-2









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CEP02N6 Даташит, Описание, Даташиты
CEP02N6/CEB02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
DRAIN-SOURCE AVALANCHE RATINGa
Single Pluse Avalanche Energy c
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
ON CHARACTERISTICSa
IGSS
Gate Threshold Voltage
VGS(th)
Condition
VGS = 0V,ID = 250µA
VDS = 600V, VGS = 0V
VGS = Ć30V, VDS = 0V
VDS = VGS, ID = 250µA
Min Typ Max Unit
125 mJ
2A
5.4 mJ
600 V
25 µA
Ć100 nA
2 4V
4
Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 1A
3.8 5.0
On-State Drain Current
ID(ON)
Forward Transconductance
gFS
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VGS = 10V, VDS = 10V
VDS = 50V, ID = 1A
VDD = 300V,
ID = 2A,
VGS = 10V
RGEN=18
VDS =480V, ID = 2A,
VGS =10V
4-3
2
1.2
A
S
18 35 ns
18 35 ns
50 90 ns
16 40 ns
20 25 nC
2 nC
12 nC









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CEP02N6 Даташит, Описание, Даташиты
CEP02N6/CEB02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
4
Parameter
Symbol Condition
Min Typ Max Unit
DYNAMIC CHARACTERISTICSb
Input Capacitance
Output Capacitance
CISS
VDS =25V, VGS = 0V
COSS f =1.0MHZ
Reverse Transfer Capacitance
CRSS 4
DRAIN-SOURCE DIODE CHARACTERISTICS a
250 PF
50 PF
30 PF
Diode Forward Voltage
VSD VGS = 0V, Is =2A
1.5 V
Notes
a.Pulse Test:Pulse Widthś300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.
c. L=60mH, IAS=2.0A, VDD=50V, RG=25, Starting TJ=25 C
3.0
VGS=10,9,8,7V
2.5
2.0
1.5 VGS=6V
1.0
VGS=5V
0.5
0
024 6
8 10 12
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
150 C
1
25 C
0.1
24
-55 C
6
1.VDS=40V
2.Pulse Test
8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
4-4










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