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CD909 PDF даташит

Спецификация CD909 изготовлена ​​​​«CDIL» и имеет функцию, называемую «NPN PLASTIC POWER TRANSISTOR».

Детали детали

Номер произв CD909
Описание NPN PLASTIC POWER TRANSISTOR
Производители CDIL
логотип CDIL логотип 

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CD909 Даташит, Описание, Даташиты
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-220 Plastic Package
CD909
CD909 NPN PLASTIC POWER TRANSISTOR
Power Linear and Switching Applications
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN. MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 4 A; IB = 0.5 A
D.C. current gain
IC = 1 A; VCE = 4 V
VCBO
VCEO
IC
Ptot
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
VCBO
VCEO
VEBO
IC
max.
max.
max.
max.
max.
100 V
90 V
12.0 A
75 W
150 °C
max. 1.0 V
min
max.
80
400
max.
max.
max.
max.
100 V
90 V
6.0 V
12.0 A
Continental Device India Limited
Data Sheet
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CD909 Даташит, Описание, Даташиты
CD909
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 100 V
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 4 A; IB = 0.5 A
Base emitter on voltage
IC = 4A; VCE = 4V
D.C. current gain
IC = 1 A; VCE = 4 V
IC = 10 A; VCE = 4 V
Transition frequency
IC = 0.3 A; VCE = 3 V
Output capacitance
IE = 0; VCB = 10V
Second breakdown collector current
with base forward biased (non-repetitive)
VCE = 21.5 V; t = 50ms
Ptot
Tj
Tstg
ICBO
IEBO
VCEO
VCBO
VEBO
VCEsat
VBEsat
VBE(on)
hFE
hFE
fT
Co
I S/b
max. 75 W
max. 150 ºC
–65 to +150 ºC
max. 100 µA
max. 1000 µA
min.
min.
min.
90 V
100 V
6.0 V
max. 1.0 V
max. 1.5 V
max. 1.5 V
min. 80
max. 400
min.
5
min.
3 MHz
typ. 100 pF
typ. 3.5 A
Continental Device India Limited
Data Sheet
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CD909 Даташит, Описание, Даташиты
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
[email protected] www.cdilsemi.com
Continental Device India Limited
Data Sheet
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