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PDF S-8261AAJMD Data sheet ( Hoja de datos )
| Número de pieza | S-8261AAJMD | |
| Descripción | Battery Protection IC for Single-Cell Pack | |
| Fabricantes | Seiko Instruments | |
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Rev.1.9_00
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series
The S-8261 series are lithium-ion / lithium polymer
rechargeable battery protection ICs incorporating high-
accuracy voltage detection circuit and delay circuit.
The S-8261 series are suitable for protection of single-cell
lithium ion/lithium polymer battery packs from overcharge,
overdischarge and overcurrent.
Features
(1) Internal high accuracy voltage detection circuit
• Overcharge detection voltage
3.9 V to 4.4 V (applicable in 5 mV step)
• Overcharge hysteresis voltage
Accuracy: ±25 mV (+25 °C) and ±30 mV (−5 °C to +55 °C)
0.0 V to 0.4 V*1 Accuracy: ±25 mV
The overcharge hysteresis voltage can be selected from the range 0.0 V to 0.4 V in 50 mV step.
• Overdischarge detection voltage 2.0 V to 3.0 V (applicable in 10 mV step) Accuracy: ±50 mV
• Overdischarge hysteresis voltage 0.0 V to 0.7 V*2 Accuracy: ±50 mV
The overdischarge hysteresis voltage can be selected from the range 0.0 V to 0.7 V in 100 mV step.
• Overcurrent 1 detection voltage 0.05 V to 0.3 V (applicable in 10 mV step) Accuracy: ±15 mV
• Overcurrent 2 detection voltage 0.5 V (fixed) Accuracy: ±100 mV
(2) High voltage device is used for charger connection pins
(VM and CO pins: absolute maximum rating = 28 V)
(3) Delay times (overcharge: tCU, overdischarge: tDL, overcurrent 1: tlOV1, overcurrent 2: tlOV2) are generated
by an internal circuit. No external capacitor is necessary.
Accuracy: ±20%
(4) Three-step overcurrent detection circuit is included.
(overcurrent 1, overcurrent 2 and load short-circuiting)
(5) 0 V battery charge function “available” / “unavailable” are selectable.
(6) Charger detection function and abnormal charge current detection function
• The overdischarge hysteresis is released by detecting negative voltage at the VM pin (−0.7 V typ.).
(Charger detection function)
• When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than
the charger detection voltage (−0.7 V typ.), the output voltage of the CO pin goes low. (Abnormal
charge current detection function)
(7) Low current consumption
• Operation mode
3.5 µA typ., 7.0 µA max.
• Power-down mode 0.1 µA max.
(8) Wide operating temperature range −40 °C to +85 °C
(9) Small package SOT-23-6, 6-Pin SNB(B)
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(where overcharge release voltage < 3.8 V is prohibited.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(where overdischarge release voltage > 3.4 V is prohibited.)
Applications
• Lithium-ion rechargeable battery packs
• Lithium polymer rechargeable battery packs
Seiko Instruments Inc.
1
1 page  
Rev.1.9_00
BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
2. Product Name List
Model No.
S-8261AAGMD-G2G-T2
S-8261AAHMD-G2H-T2
S-8261AAJBD-G2J-TF
S-8261AAJMD-G2J-T2
S-8261AALMD-G2L-T2
S-8261AAMMD-G2M-T2
S-8261AANMD-G2N-T2
S-8261AAOMD-G2O-T2
S-8261AAPMD-G2P-T2
S-8261AARBD-G2R-TF
S-8261AARMD-G2R-T2
S-8261AASMD-G2S-T2
S-8261AAUMD-G2U-T2
S-8261AAVBD-G2V-TF
S-8261AAXMD-G2X-T2
S-8261AAZMD-G2Z-T2
S-8261ABAMD-G3A-T2
S-8261ABBMD-G3B-T2
S-8261ABCMD-G3C-T2
S-8261ABDBD-G3D-TF
S-8261ABEBD-G3E-TF
S-8261ABGBD-G3G-TF
S-8261ABHBD-G3H-TF
S-8261ABIBD-G3I-TF
S-8261ABJMD-G3J-T2
S-8261ABKMD-G3K-T2
S-8261ABLBD-G3L-TF
S-8261ABMMD-G3M-T2
S-8261ABNMD-G3N-T2
S-8261ABOBD-G3O-TF
S-8261ABPMD-G3P-T2
S-8261ABRMD-G3R-T2
S-8261ABSMD-G3S-T2
Table 1 (1 / 2)
Overcharge
detection
voltage [VCU]
4.28 V
4.28 V
4.325 V
4.325 V
4.30 V
4.30 V
4.275 V
4.28 V
4.325 V
4.28 V
4.28 V
4.28 V
4.275 V
4.3 V
4.35 V
4.28 V
4.35 V
4.275 V
4.30 V
4.28 V
4.275 V
4.275 V
4.20 V
4.275 V
4.28 V
4.10 V
4.275 V
4.28 V
4.30 V
4.28 V
4.20 V
4.275 V
4.28 V
Overcharge Overdischarge Overdischarge Overcurrent 1
hysteresis detection hysteresis detection
voltage [VHC] voltage [VDL] voltage [VHD] voltage [VIOV1]
0.2 V
2.3 V
0 V 0.16 V
0.2 V
2.3 V
0 V 0.08 V
0.25 V
2.5 V
0.4 V
0.15 V
0.25 V
2.5 V
0.4 V
0.15 V
0.1 V
2.3 V
0 V 0.08 V
0.1 V
2.3 V
0V
0.2 V
0.1 V
2.3 V
0.1 V
0.1 V
0.2 V
2.3 V
0 V 0.13 V
0.25 V
2.5 V
0.4 V
0.1 V
0.2 V
2.3 V
0V
0.1 V
0.2 V
2.3 V
0V
0.1 V
0.2 V
2.3 V
0 V 0.15 V
0.1 V
2.3 V
0.1 V
0.1 V
0.2 V
2.3 V
0 V 0.13 V
0.1 V
2.3 V
0.1 V
0.1 V
0.25 V
2.5 V
0.4 V
0.1 V
0.2 V
2.5 V
0V
0.2 V
0.2 V
2.3 V
0 V 0.13 V
0.2 V
2.3 V
0 V 0.13 V
0.2 V
2.3 V
0 V 0.13 V
0.2 V
2.3 V
0V
0.1 V
0.2 V
2.3 V
0V
0.1 V
0 V 2.3 V 0 V 0.1 V
0.2 V
2.3 V
0V
0.2 V
0.2 V
3.0 V
0 V 0.08 V
0.25 V
2.5 V
0.4 V
0.15 V
0.2 V
2.3 V
0 V 0.05 V
0.2 V
2.8 V
0V
0.1 V
0.2 V
2.3 V
0 V 0.06 V
0.2 V
2.3 V
0 V 0.04 V
0.1 V
2.8 V
0.1 V
0.15 V
0.2 V
2.5 V
0.4 V
0.15 V
0.1 V
2.5 V
0.5 V
0.18 V
0 V battery
charge
function
Available
Available
Unavailable
Unavailable
Unavailable
Unavailable
Available
Unavailable
Unavailable
Available
Available
Unavailable
Available
Available
Available
Unavailable
Available
Available
Available
Available
Available
Unavailable
Available
Unavailable
Available
Unavailable
Unavailable
Available
Available
Available
Unavailable
Unavailable
Unavailable
Seiko Instruments Inc.
5
5 Page 
Rev.1.9_00
BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
3. Detection Delay Time
Table 7
S-8261AAG, S-8261AAH, S-8261AAJ, S-8261AAL, S-8261AAM, S-8261AAN, S-8261AAO, S-8261AAP,
S-8261AAR, S-8261AAZ, S-8261ABB, S-8261ABC, S-8261ABE, S-8261ABJ, S-8261ABK, S-8261ABM,
S-8261ABN, S-8261ABO, S-8261ABP, S-8261ABR, S-8261ABS
Parameter
Symbol
Test
condition
Remark
Min.
Typ.
Max.
Unit
Test
circuit
[DELAY TIME] 25 °C
Overcharge detection delay time
tCU
9
0.96 1.2 1.4 s
5
Overdischarge detection delay time tDL
9
115 144 173 ms 5
Overcurrent 1 detection delay time tlOV1
10
7.2 9 11 ms 5
Overcurrent 2 detection delay time tlOV2
Load short-circuiting detection delay
time
tSHORT
10
10
1.8 2.24 2.7 ms 5
220 320 380 µs 5
[DELAY TIME] −40 °C to +85 °C*1
Overcharge detection delay time
tCU
9
0.7 1.2 2.0 s
5
Overdischarge detection delay time tDL
9
80 144 245 ms 5
Overcurrent 1 detection delay time tlOV1
10
5 9 15 ms 5
Overcurrent 2 detection delay time tlOV2
Load short-circuiting detection delay
time
tSHORT
10
10
1.2 2.24 3.8 ms 5
150 320 540 µs 5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range
is guaranteed by design, not tested in production.
Table 8
S-8261AAS
Parameter
Symbol
Test
condition
Remark
Min.
Typ. Max. Unit
Test
circuit
[DELAY TIME] 25 °C
Overcharge detection delay time
tCU
9
0.96 1.2 1.4 s
5
Overdischarge detection delay time tDL
9
115 144 173 ms 5
Overcurrent 1 detection delay time tlOV1
10
3.6 4.5 5.4 ms 5
Overcurrent 2 detection delay time tlOV2
Load short-circuiting detection delay
time
tSHORT
10
10
1.8 2.24 2.7 ms 5
220 320 380 µs
5
[DELAY TIME] −40 °C to +85 °C*1
Overcharge detection delay time
tCU
9
0.7 1.2 2.0 s
5
Overdischarge detection delay time tDL
9
80 144 245 ms 5
Overcurrent 1 detection delay time tlOV1
10
2.5 4.5 7.7 ms 5
Overcurrent 2 detection delay time tlOV2
Load short-circuiting detection delay
time
tSHORT
10
10
1.2 2.24 3.8 ms 5
150 320 540 µs
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range
is guaranteed by design, not tested in production.
Seiko Instruments Inc.
11
11 Page | ||
| Páginas | Total 36 Páginas | |
| PDF Descargar | [ Datasheet S-8261AAJMD.PDF ] | |
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