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PDF SAP16P Data sheet ( Hoja de datos )
| Número de pieza | SAP16P | |
| Descripción | For Power Amplifier Power Transistor | |
| Fabricantes | Sanken Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SAP16P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SAP16P
Equivalent
circuit
Emitter resistor
(Complement to type SAP16N)
Application: Audio
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
–160
V
VCEO
–160
V
VEBO
–5 V
IC –15 A
IB –1 A
PC 150 ( Tc=25°C) W
Di IF
10 mA
Tj 150 °C
Tstg –40 to +150 °C
sElectrical Characteristics
Symbol
ICBO
IEBO
VCEO
hFE V
VCE (sat)
VBE (sat)
VBE
Di VF
RE
Conditions
VCB = –160V
VEB = – 5V
IC= – 30mA
VCE = – 4V, IC= – 10A
IC= – 10A, IB= – 10mA
IC= – 10A, IB = – 10mA
VCE= – 20V, IC = – 40mA
IF= 2.5mA
IE= 1A
min
–160
5000
0.176
Ratings
typ
1200
1540
0.22
( Ta = 25°C )
max
–100
–100
20000
–2.0
–2.5
0.264
Unit
µA
µA
V
V
V
mV
mV
Ω
REB 90 100 110 Ω
VhFE Rank O (5000 to 12000), Y (8000 to 20000)
External Dimensions
15.4±0.3
9.9±0.2
φ3.2±0.2
(Unit: mm)
4.5±0.2
1.6±0.2
(36°)
a
b
1±0.1
2.54±0.1
3.81±0.1
+0.2
1.35–0.1
+0.2
0.65 –0.1
+0.2
0.8 –0.1
(7.62)
(12.7)
2.54±0.1
3.81±0.1
17.8±0.3
4±0.1
ES C DB
+0.2
0.65–0.1
Weight: Approx 8.3g
a. Part No.
b. Lot No.
IC – VCE Characteristics ( Typical)
–15
–2.0mA
–1.5mA
–1.2mA
–1.0mA
–10 –0.8mA
– 0.5mA
–5
IB = –0.3mA
0
0 –2 –4 –6
Collector-Emitter Voltage VCE ( V )
VCE(sat) – IB Characteristics (Typical)
–3
IC – VBE Temperature Characteristics (Typical)
–15 (VCE=–4V)
–2
IC= –15A
–10A
–1 –5A
0
–0.4 –1
–5 –10
–50 –100 –200
Base Current IB (mA)
–10
125°C
–5
25°C
–30°C
0
0 –1 –2 –2.5
Base-Emitter Voltage VBE (V)
hFE – IC Characteristics ( Typical)
40000
125°C
(VCE = – 4V)
10000
5000
25°C
– 30°C
j-a – t Characteristics
3
1
0.5
1000
–0.3 –0.5
–1 –5
Collector Current IC (A)
–10 –15
0.1
1
5 10
50 100
Time t (ms)
500 1000 2000
Safe Operating Area (Single Pulse)
–40
–10 D.C100m1s0ms
–5
–1
–0.5
–0.1
–0.05
–3
170
Without Heatsink
Natural Cooling
–5 –10
–50 –100
Collector-Emitter Voltage VCE ( V )
–200
Di IF – VF Characteristics (Typical)
10
PC – Ta Derating
150
5
100
50
3.5 Without Heatsink
1
0 0.5 1.0 1.5 2.0
0 0 25 50 75 100 125 150
Forward Voltage VF ( V )
Ambient Temperature Ta (°C)
1 page  
3. Characteristics of the temperature compensation diodes
The several temperature compensation diodes are connected in series, so the forward voltage is varied with
small current fluctuations. Therefore, in case the forward current flowing over the diodes is set at 2.5mA and
over, the forward voltage rises, and in the worst combinations, the idling current reaches to 40mA and over
with minimum VR of 0Ω. On the contrary, in case the forward current is set at 2.5mA or below, the idling
current may not reach to 40mA with maximum VR of 200Ω.
10.0
Ta = 25°C
PN-Di
SBD
(5 diodes Total)
PN–Di+SBD
5.0
1.0
0
500 1000 1500 2000 2500 3000
VF (mV)
IF – VF Characteristics
4. Parallel push-pull application
Adjustments of the idling current are required by each the resistor in parallel push-pull applications. One
side adjustment will cause the idling current to be unstable (seesaw operation) because of the different hFE.
To be adjusted individually
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SAP16P.PDF ] | |
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