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PDF SD1070 Data sheet ( Hoja de datos )
| Número de pieza | SD1070 | |
| Descripción | RF & MICROWAVE TRANSISTORS | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SD1070 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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RF PRODUCTS DIVISION
SD1070
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
This silicon epitaxial NPN planar high frequency transistor employs a
multi emitter electrode design. This feature together with a heavily diffused
base matrix located between the individual emitters results in high RF
current handling capability, high power gain, low base resistance and low
output capacitance. These transistors are intended for Class A, B, or C
amplifier, oscillator or frequency multiplier circuits and are specifically
designed for operation in the VHF-UHF region.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! 130 - 400 MHz
! 28 Volts
! High Power Gain
! High Efficiency
! Common Emitter
! POUT = 13.5 W Min. @
175 MHz
APPLICATIONS/BENEFITS
! VHF - UHF Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
VCBO
VCES
VEBO
IC
PDISS
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
65
40
4.0
3.0
23.0
+200
TSTG Storage Temperature
-65 to +150
Unit
V
V
V
A
W
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
7.6
°C/W
PIN CONNECTION
2
13
1. Emitter
2. Base
3. Collector
Copyright 2000
MSC1642.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SD1070.PDF ] | |
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