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Datasheet SD103A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SD103A | Silicon Schottky Barrier Diodes for general purpose applications | Semtech Corporation | diode |
2 | SD103A | Small Signal Schottky Barrier Diodes www.vishay.com
SD103A, SD103B, SD103C
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• The | Vishay Siliconix | diode |
3 | SD103A | Small Signal Schottky Diodes MCC
Features
l l l Low Reverse Recovery Time Low Reverse Capacitance Low Forward Voltage Drop
omponents 21201 Itasca Street Chatsworth !"# $
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SD103A THRU SD103C
Small Signal Schottky Diodes
l Guard Ring Construction for Transient | Micro Commercial Components | diode |
4 | SD103A | Schottky Diodes SD103A THRU SD103C
Schottky Diodes
DO-35
min. 1.083 (27.5)
FEATURES ♦ For general purpose applications. ♦ The SD103 series is a metal-on-silicon
max. ∅.079 (2.0)
Cathode Mark
min. 1.083 (27.5)
Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage dr | General Semiconductor | diode |
5 | SD103A | SCHOTTKY BARRIER DIODE SD103A - SD103C
SCHOTTKY BARRIER DIODE Features
· · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance
A
B
A
Mechanical Data
· · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Ty | Diodes Incorporated | diode |
SD1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SD10-xxx | (SD Series) High Power Density / Low Profile / Shielded Inductors
®
SD Series High Power Density, Low Profile, Shielded Inductors
Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite Cooper Electronic Technologies inductor | | |
2 | SD10-xxx | High Power Density
®
SD Series High Power Density, Low Profile, Shielded Inductors
Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite Cooper Electronic data | | |
3 | SD1002 | 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor rectifier | | |
4 | SD1003 | 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor rectifier | | |
5 | SD1003 | Step-Down Converter SD1003
1200mA, 30V Synchronous Rectified Step-Down Converter
FEATURES
8V to 30V operating input range 1200mA output current Up to 92% efficiency High efficiency (>80%) at light load Internal Soft-Start 400kHz switching frequency CC/CV control mode Input under voltag ETC converter | | |
6 | SD1004 | 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor rectifier | | |
7 | SD1006 | 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor rectifier | |
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