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SD103B PDF даташит

Спецификация SD103B изготовлена ​​​​«General Semiconductor» и имеет функцию, называемую «(SD103A - SD103C) Schottky Diodes».

Детали детали

Номер произв SD103B
Описание (SD103A - SD103C) Schottky Diodes
Производители General Semiconductor
логотип General Semiconductor логотип 

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SD103B Даташит, Описание, Даташиты
SD103A THRU SD103C
Schottky Diodes
DO-35
max. .079 (2.0)
Cathode
Mark
max. .020 (0.52)
Dimensions in inches and (millimeters)
FEATURES
For general purpose applications.
The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring. The low forward
voltage drop and fast switching make it ideal for
protection of MOS devices, steering, biasing, and
coupling diodes for fast switching and low logic level
applications. Other applications are click suppression,
efficient full wave bridges in
telephone subsets, and blocking diodes in
rechargeable low voltage battery systems.
This diode is also available in MiniMELF case with the
type designation LL103A … LL103C and SOD-123 case
with the type designations SD103AW .. SD103CW.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Peak Inverse Voltage
SD103A
SD103B
SD103C
Power Dissipation (Infinite Heat Sink)
VRRM
VRRM
VRRM
Ptot
40
30
20
4001)
Single Cycle Surge
60 Hz Sine Wave
IFSM
15
Junction Temperature
Tj 1251)
Storage Temperature Range
TS –55 to +1501)
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Unit
V
V
V
mW
A
°C
°C
4/98









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SD103B Даташит, Описание, Даташиты
SD103A THRU SD103C
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Leakage Current
at VR = 30 V
at VR = 20 V
at VR = 10 V
SD103A
SD103B
SD103C
IR
IR
IR
––5
––5
––5
Forward Voltage Drop
at IF = 20 mA
at IF = 200 mA
Junction Capacitance
at VR = 0 V, f = 1 MHz
VF
VF
Ctot
– 0.37
– 0.6
50 –
Reverse Recovery Time
at IF = IR = 50 mA to 200 mA, recover to 0.1 IR
trr
– 10 –
Thermal Resistance Junction to Ambient Air
RthJA
0.31)
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature (DO-35)
Unit
µA
µA
µA
V
V
pF
ns
K/mW
RATINGS AND CHARACTERISTIC CURVES SD103A THRU SD103C









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SD103B Даташит, Описание, Даташиты
RATINGS AND CHARACTERISTIC CURVES SD103A THRU SD103C










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