CEF04N6 PDF даташит
Спецификация CEF04N6 изготовлена «Chino-Excel Technology» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | CEF04N6 |
Описание | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Производители | Chino-Excel Technology |
логотип |
5 Pages
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CEF04N6
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 2.5A , RDS(ON)=2.5Ω @VGS=10V.
6 Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole
G
D
G
D
S
TO-220F
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
-Pulsed
ID
IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperautre Range
PD
TJ, TSTG
Limit
600
Ć30
2.5
10
2.5
35
0.28
-55 to 150
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
6-122
3.6
65
C/W
C/W
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CEF04N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
a
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
EAS
Maximum Drain-Source
Avalanche Current
IAS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
ON CHARACTERISTICSa
IGSS
Gate Threshold Voltage
VGS(th)
Condition
VDD =50V, L=27mH
RG=9.1Ω
VGS = 0V,ID = 250µA
VDS = 600V, VGS = 0V
VGS = Ć30V, VDS = 0V
VDS = VGS, ID = 250µA
Min Typ Max Unit
500 mJ
4A
600 V
25 µA
Ć100 nA
2 4V
Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2A
2.2 2.5 Ω
6
On-State Drain Current
ID(ON)
Forward Transconductance
gFS
SWITCHING CHARACTERISTICSb
VGS = 10V, VDS = 10V
VDS = 40V, ID = 2A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON) VDD =300V,
tr
ID = 4A,
VGS = 10V
tD(OFF) RGEN=25Ω
Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS =480V, ID = 4A,
VGS =10V
Qgd
6-123
4
2.8
A
S
25 50 ns
65 120 ns
75 150 ns
65 120 ns
24 31 nC
4 nC
11 nC
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CEF04N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol Condition
DYNAMIC CHARACTERISTICSb
Input Capacitance
6 Output Capacitance
CISS
VDS =25V, VGS = 0V
COSS f =1.0MHZ
Reverse Transfer Capacitance
CRSS
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is =2.5A
Min Typ Max Unit
730 PF
85 PF
20 PF
1.6 V
Notes
a.Pulse Test:Pulse Widthś300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.
6
VGS=10,9,8,7V
5
4
3
2
1
0
024 6
VGS=6V
VGS=5V
8 10 12
Figure 1. Output Characteristics
10
150 C
1
-55 C
0.1 25 C
2
4
6
1.VDS=40V
2.Pulse Test
8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
6-124
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Номер в каталоге | Описание | Производители |
CEF04N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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