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NIF62514 PDF даташит

Спецификация NIF62514 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Self-protected FET with Temperature and Current Limit».

Детали детали

Номер произв NIF62514
Описание Self-protected FET with Temperature and Current Limit
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NIF62514 Даташит, Описание, Даташиты
NIF62514
Preferred Device
Self−protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain-to-Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp.
Features
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
Low RDS(on)
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
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6.0 AMPERES*
40 VOLTS CLAMPED
RDS(on) = 90 mW
Drain
Gate
Input
Overvoltage
Protection
RG
MPWR
ESD Protection
Temperature Current Current
Limit
Limit Sense
Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain-to-Source Voltage Internally Clamped
Drain-to-Gate Voltage Internally Clamped
(RGS = 1.0 MW)
Gate-to-Source Voltage
Drain Current
- Continuous @ TA = 25°C
- Continuous @ TA = 100°C
- Pulsed (tp 10 ms)
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TA = 25°C (Note 3)
Thermal Resistance
- Junction-to-Tab
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Single Pulse Drain- to- Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH,
RG = 25 W)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
ID
ID
IDM
PD
RqJT
RqJA
RqJA
EAS
TJ, Tstg
40 Vdc
40 Vdc
"16 Vdc
Internally Limited
1.1 W
1.73
8.93
14 °C/W
114
72.3
300 mJ
-55 to
150
°C
1. Mounted onto min pad board.
2. Mounted onto 1pad board.
3. Mounted onto large heatsink.
SOT-223
CASE 318E
STYLE 3
MARKING DIAGRAM
GATE
DRAIN
SOURCE
1
2
3
4
DRAIN
(Top View)
62514 = Specific Device Code
L = Location Code
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NIF62514T1
SOT-223 1000/Tape & Reel
NIF62514T3
SOT-223 4000/Tape & Reel
*Limited by the current limit circuit.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
April, 2003 - Rev. 3
1
Publication Order Number:
NIF62514/D









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NIF62514 Даташит, Описание, Даташиты
NIF62514
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain-to-Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C)
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
(VGS = -5.0 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 150 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C)
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C)
Source-Drain Forward On Voltage
(IS = 7 A, VGS = 0 V)
RDS(on)
RDS(on)
VSD
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Turn-on Rise Time
Turn-of f Delay Time
Turn-of f Fall Time
Slew-Rate On
Slew-Rate Off
10% Vin to 10% ID
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
td(on)
10% ID to 90% ID
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
trise
90% Vin to 90% ID
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
td(off)
90% ID to 10% ID
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
tfall
RL = 4.7 W,
Vin = 0 to 10 V, VDD = 12 V
-dV DS/dton
RL = 4.7 W,
Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit
(VGS = 5.0 Vdc)
(VGS = 5.0 Vdc, TJ = 150°C)
Current Limit
(VGS = 10 Vdc)
(VGS = 10 Vdc, TJ = 150°C)
Temperature Limit (Turn-of f)
VGS = 5.0 Vdc
Temperature Limit (Circuit Reset)
VGS = 5.0 Vdc
Temperature Limit (Turn-of f)
VGS = 10 Vdc
Temperature Limit (Circuit Reset)
VGS = 10 Vdc
ILIM
ILIM
TLIM(off)
TLIM(on)
TLIM(off)
TLIM(on)
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro-Static Discharge Capability Human Body Model (HBM)
ESD
Electro-Static Discharge Capability Machine Model (MM)
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
ESD
Min
42
42
-
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
6.0
3.0
7.0
4.0
150
135
150
130
4000
400
Typ
46
45
0.5
2.0
50
550
1.7
4.0
90
165
105
185
1.05
4.0
11
32
27
1.5
0.6
9.0
5.0
10.5
7.5
175
160
155
140
-
-
Max Unit
50
50
2.0
10
100
1000
Vdc
mAdc
mAdc
2.0 Vdc
6.0 mV/°C
mW
100
190
mW
120
210
-V
8.0 ms
20 ms
50 ms
50 ms
2.5 ms
1.0 ms
11 Adc
8.0
13 Adc
10
200 °C
185 °C
185 °C
170 °C
-V
-V
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NIF62514 Даташит, Описание, Даташиты
NIF62514
TYPICAL ELECTRICAL CHARACTERISTICS
12
10 VGS = 10 V
7V
8 6V
5V
6 4V
4
3V
2
TJ = 25°C
0
01 2 3 45 6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
14
12
VGS = 10 V
7V
10 6 V
5V
8
4V
6
4 TJ = -40°C
2 3V
0
012 3 456
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. Output Characteristics
8
TJ = 150°C
7
6
5
4
3
2
VGS = 10 V
7V
5V
4V
3V
6V
1
0
01 2 3 45
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Output Characteristics
6
12
VDS = 5 V
10
TJ = -40°C
8
6 TJ = 25°C
4
TJ = 150°C
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
250
225 VGS = 10 V
200 ID = 1.4 A
175
150 Maximum
125
100
75 Typical
50
25
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Drain-to-Source Resistance versus
Junction Temperature
250
225 VGS = 5 V
200 ID = 1.4 A
175 Maximum
150
125
100 Typical
75
50
25
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain-to-Source Resistance versus
Junction Temperature
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3










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NIF62514Self-protected FET with Temperature and Current LimitON Semiconductor
ON Semiconductor

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