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PDF S8241ABPMC Data sheet ( Hoja de datos )
| Número de pieza | S8241ABPMC | |
| Descripción | S-8241 | |
| Fabricantes | Seiko Instruments | |
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Rev.4.1_01
BATTERY PROTECTION IC
FOR 1- CELL PACK
S-8241 Series
www.DataSheet4UF.ceomatures
The S-8241 Series is a series of lithium-ion/lithium polymer rechargeable
battery protection ICs incorporating high-accuracy voltage detection
circuits and delay circuits.
These ICs are suitable for protection of single-cell lithium ion/lithium
polymer battery packs from overcharge, overdischarge and overcurrent.
(1) Internal high-accuracy voltage detection circuit
• Overcharge detection voltage: 3.9 V to 4.4 V (5 mV-step)
• Overcharge release voltage
Accuracy of ± 25 mV(+25°C) and ± 30 mV(−5°C to +55°C)
3.8 V to 4.4 V *1 Accuracy of ±50 mV
*1. Overcharge release voltage = Overcharge detection voltage - Overcharge hysteresis
The overcharge hysteresis can be selected in the range 0.0, or 0.1 to 0.4 V in 50mV steps.
(However, selection "Overcharge release voltage<3.8 V" is enabled.)
• Overdischarge detection voltage: 2.0 V to 3.0 V (100 mV-step) Accuracy of ±80 mV
• Overdischarge release voltage: 2.0 V to 3.4 V *2 Accuracy of ±100 mV
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis
The overdischarge hysteresis can be selected in the range 0.0 to 0.7 V in 100mV steps.
(However, selection "Overdischarge release voltage>3.4 V" is enabled.)
• Overcurrent 1 detection voltage: 0.05 V to 0.3 V (5 mV-step) Accuracy of ±20 mV
• Overcurrent 2 detection voltage: 0. 5 V (fixed) Accuracy of ±100 mV
(2) A high voltage withstand device is used for charger connection pins
(VM and CO pins: Absolute maximum rating = 26 V)
(3) Delay times (overcharge: tCU; overdischarge: tDL; overcurrent 1: tlOV1; overcurrent 2: tlOV2) are generated
by an internal circuit. (External capacitors are unnecessary.) Accuracy of ±30 %
(4) Internal three-step overcurrent detection circuit (overcurrent 1, overcurrent 2, and load short-circuiting)
(5) Either the 0 V battery charging function or 0 V battery charge inhibiting function can be selected.
(6) Products with and without a power-down function can be selected.
(7) Charger detection function and abnormal charge current detection function
• The overdischarge hysterisis is released by detecting a negative VM pin voltage (typ. -1.3 V). (Charger
detection function)
• If the output voltage at DO pin is high and the VM pin voltage becomes equal to or lower than the
charger detection voltage (typ. -1.3 V), the output voltage at CO pin goes low. (Abnormal charge current
detection function)
(8) Low current consumption
• Operation:
3.0 µA typ. 5.0 µA max.
• Power-down mode: 0.1 µA max.
(9) Wide operating temperature range: −40 to +85 °C
(10) Small package
SOT-23-5, 5-Pin SON(A)
Applications
• Lithium-ion rechargeable battery packs
• Lithium- polymer rechargeable battery packs
Packages
Package name
SOT-23-5
5-Pin SON(A)
Package
MP005-A
PN005-A
Drawing code
Tape
MP005-A
PN005-A
Reel
MP005-A
PN005-A
Seiko Instruments Inc.
1
1 page  
Rev.4.1_01
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series
Pin Configurations
SOT-23-5
Top view
54
www.DataSheet4U.com
123
Figure 2
5-Pin SON(A)
Top view
54
1 23
Pin No.
1
2
3
4
5
Symbol
VM
VDD
VSS
DO
CO
Pin Description
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
Positive power input pin
Negative power input pin
FET gate connection pin for discharge control
(CMOS output)
FET gate connection pin for charge control
(CMOS output)
Pin No. Symbol
Pin Description
1
VM
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
2
VDD
Positive power input pin
3
CO
FET gate connection pin for charge control
(CMOS output)
4
DO
FET gate connection pin for discharge control
(CMOS output)
5
VSS
Negative power input pin
Remark Pin assignment of SOT-23-5 and of 5-Pin SON(A) are different.
Figure 3
Absolute Maximum Ratings
(Ta = 25°C unless otherwise specified)
Item
Symbol Applicable pin
Rating
Unit
Input voltage between VDD and VSS *1
VDS
VDD
VSS −0.3 to VSS +12
V
VM Input pin voltage
CO output pin voltage
VVM
VM
VDD −26 to VDD +0.3
V
VCO
CO
VVM −0.3 to VDD +0.3
V
DO output pin voltage
VDO
DO
VSS −0.3 to VDD +0.3
V
Power dissipation
SOT-23-5
5-Pin SON(B)
PD
−
250 mW
150
Operation ambient temperature
Topr
−
−40 to +85
°C
Storage temperature
Tstg −
−40 to +125
°C
*1. Do not apply pulse-like noise of µs order exceeding the above input voltage (VSS + 12 V). The noise
causes damage to the IC.
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
Seiko Instruments Inc.
5
5 Page 
Rev.4.1_01
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series
(4) Measurement Condition 4, Measurement Circuit 1
〈〈 Normal operation current consumption, Power-down current consumption, Overdischarge current
consumption 〉〉
Set V1=3.5 V and V2=0 V under normal condition. The current IDD flowing through VDD pin is the normal
operation consumption current (IOPE).
• For products with power-down function
Set V1=V2=1.5 V under overdischarge condition. The current IDD flowing through VDD pin is the
power-down current consumption (IPDN).
• For products without power-down function
Set V1=V2=1.5 V under overdischarge condition. The current IDD flowing through VDD pin is the
www.DataSheet4U.comoverdischarge current consumption (IOPED).
(5) Measurement Condition 5, Measurement Circuit 1
〈〈 Internal resistance between VM and VDD, Internal resistance between VM and VSS 〉〉
Set V1=1.8 V and V2=0 V under overdischarge condition. Measure current IVM flowing through VM pin.
1.8V/|IVM| gives the internal resistance (RVMD) between VM and VDD.
Set V1=V2=3.5 V under overcurrent condition. Measure current IVM flowing through VM pin. 3.5 V/|IVM|
gives the internal resistance (RVMS) between VM and VSS.
(6) Measurement Condition 6, Measurement Circuit 1
〈〈 CO pin H resistance, CO pin L resistance 〉〉
Set V1=3.5 V, V2=0 V and V3=3.0 V under normal condition. Measure current ICO flowing through CO pin.
0.5 V/|ICO| is the CO pin H resistance (RCOH).
Set V1=4.5 V, V2=0 V and V3=0.5 V under overcharge condition. Measure current ICO flowing through CO
pin. 0.5 V/|ICO| is the CO pin L resistance (RCOL).
(7) Measurement Condition 7, Measurement Circuit 1
〈〈 DO pin H resistance, DO pin L resistance 〉〉
Set V1=3.5 V, V2=0 V and V4=3.0 V under normal condition. Measure current IDO flowing through DO pin.
0.5V/|IDO| gives the DO pin H resistance (RDOH).
Set V1=1.8 V, V2=0 V and V4=0.5 V under overdischarge condition. Measure current IDO flowing through
DO pin. 0.5 V/|IDO| gives the DO pin L resistance (RDOL).
(8) Measurement Condition 8, Measurement Circuit 1
〈〈 Overcharge detection delay time, Overdischarge detection delay time 〉〉
Set V1=3.5 V and V2=0 V under normal condition. Increase V1 gradually to overcharge detection voltage
VCU - 0.2 V and increase V1 to the overcharge detection voltage VCU + 0.2 V momentarily (within 10 µs).
The time after V1 becomes the overcharge detection voltage until VCO goes "L" is the overcharge detection
delay time (tCU).
Set V1=3.5 V and V2=0 V under normal condition. Decrease V1 gradually to overdischarge detection
voltage VDL + 0.2 V and decrease V1 to the overdischarge detection voltage VDL - 0.2 V momentarily (within
10 µs). The time after V1 becomes the overdischarge detection voltage VDL until VDO goes "L" is the
overdischarge detection delay time (tDL).
Seiko Instruments Inc.
11
11 Page | ||
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| PDF Descargar | [ Datasheet S8241ABPMC.PDF ] | |
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