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76107D PDF даташит

Спецификация 76107D изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «HUF76107D».

Детали детали

Номер произв 76107D
Описание HUF76107D
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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76107D Даташит, Описание, Даташиты
Data Sheet
HUF76107D3, HUF76107D3S
January 2003
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low voltage bus switches, and power management
in portable and battery operated products.
Formerly developmental type TA76107.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76107D3
TO-251AA
76107D
HUF76107D3S
TO-252AA
76107D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.052
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1









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76107D Даташит, Описание, Даташиты
HUF76107D3, HUF76107D3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30 V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
30 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20 V
Drain Current
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
211500o00CooCC, V,, VVGGGSSS===1450.VV5))V.()F.(i.gF.uig.rue. r.2e.)2. )..
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. ID
. ID
. ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
20
10.5
10
Figure 4
A
A
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35
0.30
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300 oC
260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 12)
VDS = 25V, VGS = 0V
VDS = 25V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 20A, VGS = 10V (Figure 9, 10)
ID = 10.5A, VGS = 5V (Figure 9)
ID = 10A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
(Figure 3)
TO-251, TO-252
VDD = 15V, ID 10A, RL = 1.50,
VGS = 4.5V, RGS = 33
(Figure 15)
MIN TYP MAX UNITS
30 - - V
- - 1 µA
- - 250 µA
-
-
±100
nA
1 - 3V
- 0.042 0.052
- 0.058 0.080
- 0.065 0.085
- - 3.3 oC/W
- - 100 oC/W
- - 120 ns
- 14 - ns
- 66 - ns
- 16 - ns
- 22 - ns
- - 57 ns
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1









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76107D Даташит, Описание, Даташиты
HUF76107D3, HUF76107D3S
Electrical Specifications TA = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 15V, ID 20A, RL =0.75,
VGS = 10V, RGS = 33
(Figures 16)
-
-
-
-
-
-
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V,ID 10.5A,
RL = 1.43
Ig(REF) = 1.0mA
(Figure 14)
-
-
-
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 13)
-
-
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
ISD = 10.5A
ISD = 10.5A, dISD/dt = 100A/µs
ISD = 10.5A, dISD/dt = 100A/µs
-
-
-
Typical Performance Curves Unless otherwise specified
TYP
-
18
30
62
20
-
8.6
4.7
0.35
1.00
2.40
315
170
30
TYP
-
-
-
MAX UNITS
75 ns
- ns
- ns
- ns
- ns
125 ns
10.3
5.7
0.42
-
-
nC
nC
nC
nC
nC
- pF
- pF
- pF
MAX
1.25
39
49
UNITS
V
ns
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
25
20
VGS = 10V
15
VGS = 4.5V
10
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1










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