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W7NB80 PDF даташит

Спецификация W7NB80 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую « STW7NB80».

Детали детали

Номер произв W7NB80
Описание STW7NB80
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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W7NB80 Даташит, Описание, Даташиты
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® STW7NB80
N-CHANNEL 800V - 1.6- 6.5A - TO-247
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STW 7NB80
800 V
< 1.9
6.5 A
s TYPICAL RDS(on) = 1.6
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Va l u e
800
800
± 30
6.5
4.1
26
160
1.28
4
-65 to 150
150
(1) I SD 6 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
December 1999
1/8









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W7NB80 Даташит, Описание, Даташиты
www.DataSheet4U.com
STW7NB80
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
0 .7 8
30
0. 1
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
6. 5
260
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 3 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
6.5
Typ.
4
1.6
Max.
5
1.9
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 3 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
2.5
Typ.
4.7
Max.
Unit
S
1250
145
16
pF
pF
pF
2/8









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W7NB80 Даташит, Описание, Даташиты
www.DataSheet4U.com
STW7NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 3 A
RG = 4.7
VGS = 10 V
Min.
Typ.
19
9
Max.
Unit
ns
ns
Qg Total Gate Charge
VDD = 640 V ID = 6 A VGS = 10 V
Q gs Gat e-Source Charge RG = 4.7 VGS = 10 V
Qgd Gat e-Drain Charge
33 47 nC
11 nC
14 nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 6 A
RG = 4.7 VGS = 10 V
Min.
Typ.
11
9
16
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 6 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
6.5
26
Unit
A
A
700
5.8
16.5
1.6
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8










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W7NB80 STW7NB80ST Microelectronics
ST Microelectronics

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