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SD2903 PDF даташит

Спецификация SD2903 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs».

Детали детали

Номер произв SD2903
Описание RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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SD2903 Даташит, Описание, Даташиты
® SD2903
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s GOLD METALLIZATION
s 2 - 500 MHz
s 30 WATTS
s 28 VOLTS
s 13 dB MIN. AT 400 MHz
s CLASS A OR AB OPERATION
s EXCELLENT THERMAL STABILITY
s COMMON SOURCE CONFIGURATION,
PUSH-PULL
DESCRIPTION
The SD2903 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
M229
(epoxy sealed)
ORDER CODE
BRANDING
SD2903
SD2903
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol
V(BR)DSS
VDGR
VGS
ID
P DISS
Tj
TSTG
Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1 M)
Gate-Source Voltage
Drain Current
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
1. Drain
2. Drain
3. Source
4.Gate
5.Gate
Value
65
65
±20
5
100
200
-65 to 150
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
Rth(c -s) Case-Heatsink T hermal Resist ance
1.75
0.40
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Uni t
V
V
V
A
W
oC
oC
oC/ W
oC/ W
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SD2903 Даташит, Описание, Даташиты
SD2903
ELECTRICAL SPECIFICATION (Tcase = 25 oC)
STATIC (Per Section)
S ymb ol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS( ON)
gFS
CISS
COSS
CRSS
VGS = 0V
VGS = 0V
VGS = 20V
VDS = 10V
VGS = 10V
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
Parameter
IDS = 15 mA
VDS = 28 V
VDS = 0 V
ID = 30 mA
ID = 1.5 A
ID = 1.5 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min.
65
1.0
0.6
Typ. Max. Unit
V
1.5 mA
1.0 µA
6.0 V
1.6 V
mho
23 pF
18 pF
3.5 pF
REF. 1021309H
DYNAMIC (Total Device)
S ymb ol
POUT f = 400 MHz
GPS f = 400 MHz
ηD f = 400 MHz
Load f = 400 MHz
Mismatch All Angles
Parameter
VDD = 28 V
VDD = 28 V
Pout = 30 W
VDD = 28 V
Pout = 30 W
VDD = 28 V
Pout = 30 W
IDQ = 100 mA
IDQ = 100 mA
IDQ = 100 mA
IDQ = 100 mA
Min.
30
13
45
5:1
Typ .
15
50
Max.
Un it
W
dB
%
VSWR
IMPEDANCE DATA
FREQ .
400 MHz
ZIN ()
4.6 - j 12
Measured Gate to Gate and Drain to Drain, Respectively.
ZDL ()
13.6 + j 10
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SD2903 Даташит, Описание, Даташиты
SD2903
TYPICAL PERFORMANCE
Capacitance vs Drain-Source Voltage
100
GC83770
Maximum Thermal Resistance vs Case
Temperature
2 .1
GC83780
f = 1 MHz
10
Ciss
Coss
1 .9
Crss
1
0 10 20 30 1.7
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
25
45 65
Tc, CASE TEMPERATURE (ºC)
85
Drain Current vs Gate Voltage
Gate-Source Voltages vs Case Temperature
5
4
VDS = 10V
3
2
T = 25°C
GC83790
T = -20°C
T = 80°C
1
0
5 6 7 8 9 10
VGS, GATE-SOURCE VOLTAGE (VOLTS)
1.05
1
0.95
0.9
-25
ID = 3A
GC8380 0
ID = 2 A
I D = 1.25 A
VDD= 10V
ID = 500 mA
ID = 25 mA
0 25 50 75
Tc, CASE TEMPERATURE (ºC)
100
3/8










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