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SD2900 PDF даташит

Спецификация SD2900 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs».

Детали детали

Номер произв SD2900
Описание RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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SD2900 Даташит, Описание, Даташиты
® SD2900
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s GOLD METALLIZATION
s COMMON SOURCE CONFIGURATION
s 2 - 500 MHz
s 5 WATTS
s 28 VOLTS
s 13.5 dB MIN. AT 400 MHz
s CLASS A OR AB OPERATION
s EXCELLENT THERMAL STABILITY
DESCRIPTION
The SD2900 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
M113
epoxy sealed
ORDER CODE
BRANDING
SD2900
SD2900
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
S ym b o l
V(BR)DSS
VDGR
VGS
ID
P DISS
Tj
TSTG
Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1M)
Gate-Source Voltage
Drain Current
Power Dissipation
Max. O perating Junction Temperature
Storage Temperature
1. Drain
2. Source
3.Gate
4. Source
Value
65
65
±20
900
21. 9
200
-65 to 150
Uni t
V
V
V
mA
W
oC
oC
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
Rth(c-s) Case-Heatsink Thermal Resistance
8.0
0.30
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
oC/ W
oC/ W
November 1999
1/8









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SD2900 Даташит, Описание, Даташиты
SD2900
ELECTRICAL SPECIFICATION (Tcase = 25 oC)
STATIC
Symb ol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS( ON)
gFS
CISS
COSS
CRSS
VGS = 0V
VGS = 0V
VGS = 20V
VDS = 10V
VGS = 10V
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
Parameter
IDS = 5 mA
VDS = 28 V
VDS = 0 V
ID = 10 mA
ID = 0.5 A
ID = 0.5 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
DYNAMIC
Symb ol
POUT f = 400 MHz
GPS f = 400 MHz
ηD f = 400 MHz
Load f = 400 MHz
Mismatch All Angles
Parameter
VDD = 28 V
VDD = 28 V
Pout = 5 W
VDD = 28 V
Pout = 5 W
VDD = 28 V
Pout = 5 W
IDQ = 50 mA
IDQ = 50 mA
IDQ = 50 mA
IDQ = 50 mA
Min.
65
1.0
0.2
Typ . Max. Un it
V
0.5 mA
1.0 µA
6.0 V
1.6 V
mho
8.5 pF
7.8 pF
1.4 pF
REF. 1021307I
Min.
5
13.5
45
30:1
Typ .
16
50
M a x.
Un it
W
dB
%
VSWR
IMPEDANCE DATA
FREQ .
400 MHz
ZIN ()
8.6 - j 24.6
ZDL ()
22.6 + j 27.0
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SD2900 Даташит, Описание, Даташиты
SD2900
TYPICAL PERFORMANCE
Capacitance vs Drain-Source Voltage
GC83130
100
f = 1 MHz
Ciss
10
Coss
Crss
1
0 10 20
VDS. DRAIN-SOURCE VOLTAGE (VOLTS)
30
Maximum Thermal Resistance vs Case
Temperature
10
9.5
9
8.5
8
7.5
25
GC83 14 0
45 65
Tc, CASE TEMPERATURE (ºC)
85
Drain Current vs Gate Voltage
Gate-Source Voltages vs Case Temperature
100 0
800
600
400
200
0
5
VDS = 10V
GC83 15 0
T = -20 °C
T = 25 °C
T = 80 °C
6789
VGS, GATE-SOURCE VOLTAGE (VOLTS)
10
1 .04
1 .02
1
0 .98
0 .96
V DD = 1 0 V
I D = 1 00 m A
0 .94
-25
0 25 50
Tc, CASE TEMPERATURE (ºC)
GC83 160
ID = 7 50 mA
ID = 5 00 mA
I D = 2 00 m A
ID = 5 0 mA
7 5 1 00
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