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PDF NE500100 Data sheet ( Hoja de datos )
| Número de pieza | NE500100 | |
| Descripción | (NE500100 / NE500199) C-Band Medium Power GaAs MESFET | |
| Fabricantes | NEC Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NE500100 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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C-BAND MEDIUM POWER GaAs MESFET NE8500100
NE8500199
FEATURES
ABSOLUTE MAXIMUM RATINGS1
• HIGH OUTPUT POWER: 1 W
• HIGH LINEAR GAIN: 9.0 dB
(TC = 25 °C unless otherwise noted)
SYMBOLS
PARAMETERS
VDS Drain to Source Voltage
UNITS
V
RATINGS
15
• HIGH EFFICIENCY: 37% (PAE)
VGD Gate to Drain Voltage V -18
• INDUSTRY STANDARD PACKAGING
• THIS DEVICE IS ALSO AVAILABLE AS A
mTWO-CELL CHIP: NE8500100
oDESCRIPTION
.cThe NE8500199 is a medium power GaAs MESFET designed
for up to a 1W output stage or as a driver for higher power
Udevices. The device has no internal matching and can be
used at frequencies from UHF to 8.5 GHZ. The device is
t4available in the “99” package or in chip form. The chip is a two-
cell die; bonding both cells delivers the rated performance.
eThe NE850 Series Transistors are manufactured to NEC's
estringent quality assurance standards to ensure highest reli-
hability and consistent superior performance.
VGS Gate to Source Voltage
V
-12
IDS Drain Current
A IDSS
IGS Gate Current
mA 6.0
PT Total Power Dissipation W
6.0
TCH
TSTG
Channel Temperature
Storage Temperature
°C 175
°C -65 to +175
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS MIN TYP MAX
VDS Drain to Source Voltage V 9
TCH Channel Temperature
°C
GCOMP Gain Compression
dB
RG Gate Resistance
KΩ
10
130
3.0
14
taSELECTRICAL CHARACTERISTICS (TC = 25°C)
aPART NUMBER
.DPACKAGE OUTLINE
NE8500199
NE8500100
00 (Chip), 99
wSYMBOLS
CHARACTERISTICS
POUT
Power Out at Fixed Input Power
wGL Linear Gain
wηADD
Collector Efficiency
UNITS
dBm
dB
%
MIN
28.5
TYP
29.5
9.0
37
MAX
TEST CONDITIONS
PIN = 21.0 dBm
f = 7.2 GHz
VDS = 10 V; IDSQ = 200 mA
IDS Drain Source Current
mA 200
RG = 1KΩ
IDSS Saturated Drain Current
mA 330
825 VDS = 2.5 V; VGS = 0 V
VP Pinch-off Voltage
V -3.0
-1.0 VDS = 2.5 V; IDS = 4 mA
gm Transconductance
mS 300 VDS = 2.5 V; IDS = IDSS
RTH Thermal Resistance
°C/W
60 Channel to Case
California Eastern Laboratories
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NE500100.PDF ] | |
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