PDF HAT2142H Data sheet ( Hoja de datos )

Número de pieza	HAT2142H
Descripción	Silicon N-Channel Power MOS FET Power Switching
Fabricantes	Renesas
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No Preview Available ! To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 1 page HAT2142H Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance V(BR)DSS V(BR)GSS I GSS IDSS VGS(off) RDS(on) RDS(on) \|y \| fs Ciss 100 ± 20 — — 2.0 — — 9 — Output capacitance Coss — Reverse transfer capacitance Crss — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time td(on) tr td(off) t f V DF trr — — — — — — Notes: 4. Pulse test Typ — — — — — 35 38 15 2000 175 90 32 8.0 7.5 18 11 60 9 0.82 50 Max — — ± 10 1 3.5 44 51 — — — — — — — — — — — 1.07 — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 V = ±16 V, V = 0 GS DS VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 5 A, VGS = 10 V Note4 ID = 5 A, VGS = 7 V Note4 I = 5 A, V = 10 V Note4 D DS V = 10 V DS VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 10 A VGS = 10 V, ID = 5 A VDD ≅ 30 V RL = 6 Ω Rg = 4.7 Ω IF = 10 A, V = 0 Note4 GS IF = 10 A, VGS = 0 diF/ dt = 100 A/ µs Rev.5, Sep. 2002, page 3 of 3 5 Page Package Dimensions 4.9 5.3 Max 4.0 ± 0.2 5 0.25 +0.05 –0.03 HAT2142H As of January, 2002 Unit: mm 3.3 1 1.27 4 0.20 +0.05 –0.03 0.75 Max 0.10 0.40 ± 0.06 0.25 M 0˚ – 8˚ Hitachi Code JEDEC JEITA Mass (reference value) LFPAK — — 0.080 g Rev.5, Sep. 2002, page 9 of 9 11 Page

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