SCP10C60 PDF даташит
Спецификация SCP10C60 изготовлена «Semiwell» и имеет функцию, называемую «Silicon Controlled Rectifiers». |
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Детали детали
Номер произв | SCP10C60 |
Описание | Silicon Controlled Rectifiers |
Производители | Semiwell |
логотип |
5 Pages
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SemiWell Semiconductor
SCP10C60
Silicon Controlled Rectifiers
Symbol
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 10 A )
◆ Low On-State Voltage (1.4V(Typ.)@ ITM)
◆ Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
○
2. Anode
TO-220
123
3. Gate
○
○
1. Cathode
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
Half Sine Wave : TC = 111 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I2t I2t for Fusing
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings
600
6.4
10
110
60
50
5
0.5
2
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/㎲
W
W
A
V
°C
°C
Aug, 2003. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
1/5
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SCP10C60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
IGT Gate Trigger Current (2)
VAK = VDRM
TC = 25 °C
TC = 125 °C
ITM = 20 A
tp=380㎲
VAK = 6 V(DC), RL=10 Ω
TC = 25 °C
─
─
─
─
─ 10 ㎂
─ 200
─ 1.6 V
─ 15 mA
VGT Gate Trigger Voltage (2)
VD = 6 V(DC), RL=10 Ω
TC = 25 °C
─
─ 1.5 V
VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ─ ─ V
dv/dt
Critical Rate of Rise Off-State Linear slope up to VD=VDRM 67%,
Voltage
Gate open
TJ = 125°C
200
─
─ V/㎲
IH Holding Current
IT = 100mA, Gate Open
TC = 25 °C
─
─ 20 mA
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement.
─ ─ 1.3 °C/W
─ ─ 60 °C/W
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Fig 1. Gate Characteristics
101
V (5V)
GM
PGM(5W)
100
25oC
PG(AV)(0.5W)
10-1
10-1
VGD(0.2V)
100 101 102
Gate Current [mA]
103
Fig 3. Typical Forward Voltage
102
104
125 oC
101
25 oC
100
0.5 1.0 1.5 2.0 2.5 3.0 3.5
On-State Voltage [V]
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
SCP10C60
Fig 2. Maximum Case Temperature
160
θ = 180o
140
120
100
π 2π
80 θ
360°
60 θ : Conduction Angl e
40
0123456
Average On-State Current [A]
7
8
Fig 4. Thermal Response
101
100
10-1
10-2
10-3
10-5 10-4 10-3 10-2 10-1 100 101
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
10
11
0.1
-50
0 50 100
Junction Temperature[oC]
150
0.1
-50
0 50 100
Junction Temperature[oC]
150
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SCP10C60 | Silicon Controlled Rectifiers | Semiwell |
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