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PDF CD9014 Data sheet ( Hoja de datos )
| Número de pieza | CD9014 | |
| Descripción | NPN SILICON PLANAR TRANSISTOR | |
| Fabricantes | CDIL | |
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
CD9014
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PC
Tj, Tstg
VALUE
50
50
5.0
100
625
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP MAX
Collector -Emitter Voltage
VCEO
IC=1mA, IB=0
50 -
-
Collector -Base Voltage
VCBO IC=100uA, IE=0
50 -
-
Emitter Base Voltage
VEBO
IE=100uA, IC=0
5.0 -
-
Collector Cut off Current
ICBO
VCB=50V, IE=0
- - 50
Emitter Cut off Current
IEBO
VEB=5V, IC=0
- - 50
DC Current Gain
hFE IC=1mA,VCE=5V 60 - 1000
Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA
-
- 0.30
Emitter Base Saturation Voltage
VBE(Sat) IC=100mA,IB=5mA
-
- 1.0
Dynamic Characteristics
Output Capacitance
Cob VCB=10V,f=1MHz
-
- 3.50
Transition Frequency
ft
VCE=5V,IC=10mA,
125
-
-
f=100MHz
Noise Figure
NF
VCE=5V, IC=200uA
-
- 4.0
f=1KHz
hFE CLASSIFICATION
A : 60-150, B : 100-300, C : 200-600, D : 400-1000,
D1 : 400-630, D2 : 570-840, D3 : 760-1000, E : >800
UNIT
V
V
V
mA
mW
deg C
UNIT
V
V
V
nA
nA
V
V
pF
MHz
dB
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CD9014.PDF ] | |
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