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Número de pieza | SBB5089 | |
Descripción | Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier | |
Fabricantes | Sirenza Microdevices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SBB5089 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! t4U.com SSBBBB--55008899Z PbProduct Description
eSirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC
eamplifier utilizing a Darlington configuration with an active bias network.
hThe active bias network provides stable current over temperature and
Sprocess Beta variations. Designed to run directly from a 5V supply, the
taSBB-5089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-5089 product is designed for high linearity
a5V gain block applications that require small size and minimal external
.Dcomponents. It is internally matched to 50 ohms.
RoHS Compliant
& Green Package
0.05-6 GHz, Cascadable
Active Bias InGaP/GaAs HBT MMIC Amplifier
wThe matte tin finish on Sirenza’s lead-free package utilizes a post annealing
wprocess to mitigate tin whisker formation and is RoHS compliant per EU
wDirective 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
mGain & Return Loss vs. Frequency (w/ BiasTees)
o30
.c20
S21
10
U0
t4-10
S22
-20
e-30 S11
e-40
012 3456
hFrequency (GHz)
Product Features
• Available in Lead free, RoHS compliant, & Green packaging
• Wideband Flat Gain to 4GHz: +/-1.1dB
• P1dB = 20.4 dBm @ 1950MHz
• Single Fixed 5V Supply
• Robust 1000V ESD, Class 1C
• Patented Thermal Design & Patent Pending Bias Circuit
• Low Thermal Resistance
• MSL 1 moisture rating
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• Wideband Intrumentation
• Wireless Data, Satellite Terminals
SSymbol
Parameters
taS21 Small Signal Gain
aP1dB
Output Power at 1 dB Compression
.DIP3
Bandwidth
wS11
wS22
mS12
w oNF
.cVD
t4UID
eRTH, j-l
Third Order Intercept Point
S11, S22: Minimum 10dB Return Loss (typ.)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
Units
dB
dBm
dBm
MHz
dB
dB
dB
dB
V
mA
°C/W
Frequency
850 MHz
1950 MHz
6000 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950 MHz
1950 MHz
1950 MHz
1950 MHz
Min.
19
18.5
14.5
19
33
10
10
72
Typ.
20.5
20
16
20.5
20.5
38.5
35
3000
14
14
23.3
4.2
5
80
69.9
Max.
22
21.5
17.5
4.9
5.25
92
heTest ConditioTnse:st CoVnDd=it5iVons:
STL = 25°C
VS = 5 VID = 80mA Typ.ID = 80 mA Typ. OIP3 TonOeIPS3pTaocinneg S=p1aMcHinzg, P=o1utMpHerz,toPneou=t0pedrBtmone = 0 dBm
TL = 25ZºCS = ZL = 50 OZhmS =s ZL = 50 OhmsTested witMh eBaiassurTeedeswith Bias Tees
taThe information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
ainformation, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
.D303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
wwwBroomfield, CO 80021
1
EDS-103839 Rev D
1 page Application Schematic
VS
RF in
1 uF 1200
pF
CB
4
1
SBB-5089
3
CB 2
LC
CB
RF out
Evaluation Board Layout
Mounting Instructions
1. Solder the copper pad on the backside of the device package to
the ground plane.
2. Use a large ground pad area with many plated through-holes as
shown.
3. We recommend 1 or 2 ounce copper. Measurement for this
datasheet were made on a 31 mil thick FR-4 board with 1
ounce copper on both sides.
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier
Application Circuit Element Values
Reference
Designator
Frequency (MHz)
500 to 3500
CB 68pF
LC 82nH 1008CS
Absolute Maximum Ratings
Parameter
Absolute Limit
Ma. Dvice Current (ID)
Max Device Voltage (VD)
Max. RF Input Power
100 mA
5.5 V
+12 dBm
Max. Operating Dissipated
Power
0.55 W
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
ESD Class 1C
Appropriate precautions in handling, packaging and testing
devices must be observed.
MSL (Moisture Sensitivity Level) Rating: Level 1
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-103839 Rev D
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SBB5089.PDF ] |
Número de pieza | Descripción | Fabricantes |
SBB5089 | Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier | Sirenza Microdevices |
SBB5089Z | Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier | Sirenza Microdevices |
SBB5089Z | CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER | RFMD |
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