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PDF H5N5006LS Data sheet ( Hoja de datos )
| Número de pieza | H5N5006LS | |
| Descripción | (H5N5006xx) Silicon N-Channel MOSFET | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H5N5006LS (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1549 (Z)
omFeatures
.c• Low on-resistance
• Low leakage current
U• High speed switching
t4• Low gate charge
• Avalanche ratings
eOutline
heLDPAK
taSD
.DaG
www www.DataSheet4U.comS
Rev.0
Aug.2002
4 44
1
2
3
1
2
1
2
H5N5006LS
3
3 H5N5006LM
H5N5006LD
1. Gate
2. Drain
3. Source
4. Drain
1 page  
H5N5006LD, H5N5006LS, H5N5006LM
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
20
Pulse Test
16
12
ID=3A
8
2A
4
1A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5 VGS = 10 V, 15 V
2
1
0.5
0.2
0.1
0.1 0.2
0.5 1
Drain Current
2
ID (A)
5
10
Static Drain to Source on State Resistance
VS. Temperature
10
Pulse Test
V GS = 10 V
8
6 ID=3A
4
2A
2 1A
0
−40 0
40 80 120
Cace Temperature Tc (°C)
160
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = −25°C
2
25°C
1
75°C
0.5
0.2
0.1
0.1
0.2 0.5 1
Drain Current
V DS = 10 V
Pulse Test
2 5 10
ID (A)
Rev.0, Aug. 2002, page 5 of 12
5 Page 
• H5N5006LM
H5N5006LD, H5N5006LS, H5N5006LM
Unit: mm
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.2
7.8
6.6
1.37 ± 0.2
1.3 ± 0.2
2.54 ± 0.5
0.86
+
–
0.2
0.1
2.54 ± 0.5
0.1
+
–
0.2
0.1
2.49 ± 0.2
0.4 ± 0.1
2.2
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
Rev.0, Aug. 2002, page 11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet H5N5006LS.PDF ] | |
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