H5N5006LM PDF даташит
Спецификация H5N5006LM изготовлена «Hitachi» и имеет функцию, называемую «(H5N5006xx) Silicon N-Channel MOSFET». |
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Детали детали
Номер произв | H5N5006LM |
Описание | (H5N5006xx) Silicon N-Channel MOSFET |
Производители | Hitachi |
логотип |
12 Pages
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H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1549 (Z)
omFeatures
.c• Low on-resistance
• Low leakage current
U• High speed switching
t4• Low gate charge
• Avalanche ratings
eOutline
heLDPAK
taSD
.DaG
www www.DataSheet4U.comS
Rev.0
Aug.2002
4 44
1
2
3
1
2
1
2
H5N5006LS
3
3 H5N5006LM
H5N5006LD
1. Gate
2. Drain
3. Source
4. Drain
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H5N5006LD, H5N5006LS, H5N5006LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Channel dissipation
V
DSS
V
GSS
ID
I (pulse) Note 1
D
I
DR
I Note 3
AP
Pch Note 2
Channel to case thermal impedance θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Value
500
±30
3.5
14
3.5
3.5
50
2.5
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
Rev.0, Aug. 2002, page 2 of 12
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H5N5006LD, H5N5006LS, H5N5006LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
V(BR)DSS
IDSS
I
GSS
V
GS(off)
|yfs|
RDS(on)
500
—
—
3.0
1.8
—
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
td(on) —
Rise time
tr —
Turn-off delay time
td(off) —
Fall time
tf —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
VDF
trr
—
—
Body-drain diode reverse recovery Qrr
charge
—
Notes: 4. Pulse test
Typ
—
—
—
—
3.0
2.5
Max
—
1
±0.1
4.5
—
3.0
Unit
V
µA
µA
V
S
Ω
Test Conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
V = ±30 V, V = 0
GS DS
V = 10 V, I = 1 mA
DS D
I = 1.75 A, V = 10 V Note 4
D DS
I = 1.75 A, V = 10 V Note 4
D GS
365 — pF V = 25 V
DS
35 — pF V = 0
GS
8 — pF f = 1 MHz
20 — ns VDD ≅ 250 V, ID = 1.75 A
13 — ns V = 10 V
GS
48
—
ns
R
L
=
143
Ω
14 — ns Rg = 10 Ω
14 — nC VDD = 400 V
2 — nC VGS = 10 V
8 — nC ID = 3.5 A
0.85 1.3 V
I = 3.5 A, V = 0
F GS
280 — ns I = 3.5 A, V = 0
F GS
diF/dt = 100 A/µs
0.8 —
µC
Rev.0, Aug. 2002, page 3 of 12
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