(PDF) H5N5001FM Datasheet - Silicon N-Channel MOSFET

Número de pieza	H5N5001FM
Descripción	Silicon N-Channel MOSFET
Fabricantes	Hitachi
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No Preview Available ! H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) omFeatures .c• Low on-resistance : RDS(on) =1.1Ω typ. • Low leakage current : IDSS =1µA max (at VDS = 500 V) U• High speed switching : tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) • Low gate charge : Qg = 15nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) t4• Avalanche ratings eOutline heTO–220FM 1st. Edition Mar. 2001 ataSD .DG www www.DataSheet4U.comS 123 1. Gate 2. Drain 3. Source 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 12 8 ID=5A 4 2A 1A 0 2 4 6 8 10 Gate to Source Voltage V GS (V) H5N5001FM Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test VGS = 10 V, 15 V 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 50 Static Drain to Source on State Resistance vs. Temperature 5 Pulse Test V GS = 10 V 4 3 ID=5A 2 2A 1 1A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 50 20 10 Tc = –25 °C 5 2 25 °C 1 75 °C 0.5 0.2 V DS = 10 V 0.1 0.1 0.2 0.5 1 2 Pulse Test 5 10 20 50 Drain Current I D (A) 5 5 Page

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PDF H5N5001FM Data sheet ( Hoja de datos )