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PDF HN29V1G91T-30 Data sheet ( Hoja de datos )
| Número de pieza | HN29V1G91T-30 | |
| Descripción | 128M X 8-bit AG-AND Flash Memory | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HN29V1G91T-30
128M × 8-bit AG-AND Flash Memory
REJ03C0056-0400Z
Rev. 4.00
Jul.20.2004
Description
The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's
previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist Gate-
AND) type Flash memory cell using multi level cell technology provides both the most cost effective
solution and high speed programming.
Features
• On-board single power supply: VCC = 2.7 V to 3.6 V
• Operation Temperature range: Ta = 0 to +70°C
• Memory organization
Memory array: (2048+64) bytes × 16384 page × 4 Bank
Page size: (2048+64) bytes
Block size: (2048+64) bytes × 2 page
Page Register: (2048+64) bytes × 4 Bank
• Multi level memory cell
2bit/cell
• Automatic program
Page program
Multi bank program
Cache program
2 page cache program
• Automatic Erase
Block Erase
Multi Bank Block Erase
• Access time
Memory array to register (1st access time): 120 µs max
Serial access: 35 ns min
Rev.4.00, Jul.20.2004, page 1 of 89
1 page  
HN29V1G91T-30
Memory map and address
Memory Map
FFFFH
FFFEH
FFFDH
0006H
0005H
0004H
0003H
0002H
0001H
0000H
1Page = (2048+64)Bytes: Program Size
1Block = (2048+64)Bytes x 2Pages: Erase Size
= (4096+128)Bytes: Erase Size
1Device = (2048+64)Bytes x 2Pages x 32768Blocks
2048bytes
Data register
2048bytes
64bytes
Block 2
Block 1
Block 0
64bytes
Bank Organization
Bank0
(8192Blocks)
(16384pages)
Block 0
page 0
page 4
Block 4
page 8
page 12
Bank1
(8192Blocks)
(16384pages)
Block 1
page 1
page 5
Block 5
page 9
page 13
Bank2
(8192Blocks)
(16384pages)
Block 2
page 2
page 6
Block 6
page 10
page 14
Bank3
(8192Blocks)
(16384pages)
Block 3
page 3
page 7
Block 7
page 11
page 15
Block 32764
page 65528
page 65532
Block 32765
page 65529
page 65533
Block 32766
page 65530
page 65534
Block 32767
page 65531
page 65535
Addressing
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
Symbol I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1
CA1
CA2
A7 A6 A5 A4 A3 A2 A1 A0 Column
L L L L A11 A10 A9 A8 address
RA1
RA2
A19 A18 A17 A16 A15 A14 A13 A12 Row
A27 A26 A25 A24 A23 A22 A21 A20 address
A12, A13: Bank select
A14: Page select
A15 to A27: Block select
Rev.4.00, Jun.20.2004, page 5 of 89
5 Page 
HN29V1G91T-30
CLE
CE
WE
ALE
RE
column address M Page address N
I/O 00h CA1 CA2 RA1 RA2 30h
R/B
Memory array
Page N
tR
Busy
M M+1 M+2
Page address N
Data register
M
4page read
R/B
tR
pageN
column J N=0,4,8,12...
pageN
I/O 00h CA1 CA2 RA1 RA2 30h
DOUT
DOUT
(1) (2)
R/B (A)
columnL pageN+2
I/O (B) 06h CA1 CA2 RA1 RA2 E0h DOUT
(4)
DOUT
Bank 0
Bank 1
Memory array
Page N
Page N+1
(A)
columnK pageN+1
06h CA1 CA2 RA1 RA2 E0h DOUT
(3)
DOUT (B)
columnM pageN+3
06h CA1 CA2 RA1 RA2 E0h DOUT
(5)
Bank 2
Bank 3
DOUT
Page N+2
Page N+3
Data register
Memory array
Bank 0
Page N
Bank 1
Page N+1
(1)
Bank 2
Page N+2
Bank 3
Page N+3
Data register
column J
(2)
column K
(3)
column L
(4)
column M
(5)
Rev.4.00, Jun.20.2004, page 11 of 89
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HN29V1G91T-30.PDF ] | |
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