NTGS3433T1 PDF даташит
Спецификация NTGS3433T1 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET -3.3 Amp -12 Volts». |
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Детали детали
Номер произв | NTGS3433T1 |
Описание | Power MOSFET -3.3 Amp -12 Volts |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTGS3433T1
MOSFET
−3.3 Amps, −12 Volts
P−Channel TSOP−6
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
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Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
mMAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
oRating
Symbol Value Unit
.cDrain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance
UJunction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
t4Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
eMaximum Operating Power Dissipation
Maximum Operating Drain Current
eThermal Resistance
hJunction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current
S− Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
taMaximum Operating Power Dissipation
Maximum Operating Drain Current
aOperating and Storage Temperature Range
VDSS
VGS
RθJA
Pd
ID
IDM
Pd
ID
RθJA
Pd
ID
IDM
Pd
ID
TJ, Tstg
−12
"8.0
Volts
Volts
62.5
2.0
−3.3
°C/W
Watts
Amps
−20
1.0
−2.35
Amps
Watts
Amps
128 °C/W
1.0 Watts
−2.35
−14
0.5
−1.65
−55 to
150
Amps
Amps
Watts
Amps
°C
Maximum Lead Temperature for Soldering TL 260 °C
.DPurposes for 10 Seconds
1 Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), t t 5.0 seconds.
w2 Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), operating to steady state.
VDSS
−12 V
RDS(ON) TYP
75 mΩ @ VGS = −4.5 V
ID MAX
−3.3 A
P−Channel
1256
DRAIN
3
GATE
4
SOURCE
1
TSOP−6
CASE 318G
STYLE 1
MARKING
DIAGRAM
433
x
433 = Device Code
x = Date Code
PIN ASSIGNMENT
Drain Drain Source
6 54
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1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3433T1
TSOP−6 3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
April, 2004 − Rev. 1
NTGS3433T1/D
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NTGS3433T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 3 & 4)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −10 mA)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −8 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = −8 Vdc, TJ = 70°C)
Gate−Body Leakage Current
(VGS = −8.0 Vdc, VDS = 0 Vdc)
Gate−Body Leakage Current
(VGS = +8.0 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSS
IGSS
−12
−
−
−
−
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
Static Drain−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −3.3 Adc)
(VGS = −2.5 Vdc, ID = −2.9 Adc)
Forward Transconductance
(VDS = −10 Vdc, ID = −3.3 Adc)
VGS(th)
RDS(on)
gFS
−0.50
−
−
−
DYNAMIC CHARACTERISTICS
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −10 Vdc, VGS = −4.5 Vdc,
ID = −3.3 Adc)
Qtot
Qgs
Qgd
−
−
−
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = −5.0 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
−
−
−
SWITCHING CHARACTERISTICS
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDD = −10 Vdc, ID = −1.0 Adc,
VGS = −4.5 Vdc, Rg = 6.0 W)
tr
td(off)
−
−
Fall Time
tf −
Reverse Recovery Time
(IS = −1.7 Adc, dlS/dt = 100 A/ms)
trr
−
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(IS = −1.7 Adc, VGS = 0 Vdc)
VSD
−
Diode Forward On−Voltage
(IS = −3.3 Adc, VGS = 0 Vdc)
VSD
−
3. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
4. Class 1 ESD rated − Handling precautions to protect against electrostatic discharge is mandatory.
Typ
−
−
−
−
−
−0.70
0.055
0.075
7.0
7.0
2.0
3.5
550
450
200
20
20
110
100
30
−0.80
−0.90
Max Unit
−
−1.0
−5.0
−100
100
Vdc
mAdc
nAdc
nAdc
−1.50
0.075
0.095
−
Vdc
W
mhos
15 nC
−
−
− pF
−
−
30 ns
30
120
115
− ns
−1.5
−
Vdc
Vdc
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NTGS3433T1
12
VGS = −5 V
VGS = −2.5 V
10 VGS = −3 V
VGS = −3.5 V
8 VGS = −4 V
VGS = −4.5 V
6 VGS = −2 V
4
TJ = 25°C
2
VGS = −1.5 V
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
20
18 VDS ≥ −10 V
16 TJ = −55°C
14 TJ = 25°C
12
10
TJ = 125°C
8
6
4
2
0
0.5 1 1.5 2 2.5 3 3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4
0.4
0.35
0.3
ID = −3.3 A
TJ = 25°C
0.25
0.2
0.15
0.1
0.05
0
024 68
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.3
0.25
TJ = 25°C
0.2
0.15
0.1
0.05
VGS = −2.5 V
VGS = −4.5 V
0
0 2 4 6 8 10 12 14 16 18 20
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
ID = −3.3 A
VGS = −4.5 V
1.4
1200
1000
VGS = 0 V
TJ = 25°C
800
1.2
600 Ciss
1
400 Coss
0.8 200 Crss
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
0
0 2.5 5 7.5 10 12.5 15 17.5 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
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NTGS3433T1 | Power MOSFET -3.3 Amp -12 Volts | ON Semiconductor |
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