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PDF HAT3010R Data sheet ( Hoja de datos )
| Número de pieza | HAT3010R | |
| Descripción | Silicon N/P Channel Power MOSFET | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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HAT3010R
Silicon N/P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
ADE-208-1402F (Z)
7th. Edition
Feb. 2002
Outline
SOP-8
78
DD
8 7 65
1 234
56
DD
24
GG
1, 3 Source
2, 4 Gate
S1 S 3 5, 6, 7, 8 Drain
Nch Pch
www.DataSheet4U.com
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1 page  
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0 1 Drive Operation
0 50 100 150 200
Ambient Temperature Ta (°C)
HAT3010R
Rev.6, Feb. 2002, page 5 of 14
5 Page 
HAT3010R
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1 VGS = -4.5 V
0.05 -10 V
0.02
0.01
−1
−3
−10 −30
−100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
0.15
0.10
VGS = –4.5 V
–5 A
I D = -1,–2 A
–5 A
0.05
0
–40
–10 V
–1, –2 A
0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = −25°C
5
2
25°C
75°C
1
0.5
−0.1 −0.3
VDS = −10 V
Pulse Test
−1 −3 −10 −30 −100
Drain Current I D (A)
1000
500
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
−0.1 −0.3 −1 −3 −10 −30 −100
Reverse Drain Current I DR (A)
Rev.6, Feb. 2002, page 11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet HAT3010R.PDF ] | |
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