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PDF H13003 Data sheet ( Hoja de datos )

Número de pieza H13003
Descripción High Voltage Switch Mode Applications
Fabricantes Shantou Huashan Electronic　
Logotipo Shantou Huashan Electronic Logotipo



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No Preview Available ! H13003 Hoja de datos, Descripción, Manual

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H13003
HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching. Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-65~150
Tj Junction Temperature
150
PC Collector Dissipation
40W
VCBO Collector-Base Voltage
700V
VCEO Collector-Emitter Voltage
400V
VEBO Emitter-Base Voltage
9V
I CCollector Current
1.5A
IB Base Curren
0.75A
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCEO
IEBO
HFE1
HFE2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
fT
tON
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn On Time
Min
400
10
5
4
Typ
tSTG Storage Time
tF Fall Time
hFE Classification
H1 H2
H3
Max Unit
Test Conditions
V IC=5mA, IB=0
10 A VEB=9V, IC=0
40 VCE=5V, IC=0.5A
VCE=2V, IC=1A
0.5 V IC=0.5A, IB=0.1A
1 V IC=1A, IB=0.25A
3 V IC=1.5A, IB=0.5A
1 V IC=0.5A, IB=0.1A
1.2 V IC=1A, IB=0.25A
MHz VCE=10V,IC=0.1A
1.1 s
VCC=125V, IC=1A,
4.0 s IB1=0.2A,IB2=-0.2A
0.7 s RL=125
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29-40

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