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SE3455 PDF даташит

Спецификация SE3455 изготовлена ​​​​«Honeywell» и имеет функцию, называемую «GaAs Infrared Emitting Diode».

Детали детали

Номер произв SE3455
Описание GaAs Infrared Emitting Diode
Производители Honeywell
логотип Honeywell логотип 

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SE3455 Даташит, Описание, Даташиты
SE3455/5455
GaAs Infrared Emitting Diode
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90¡ or 20¡ (nominal) beam angle option
935 nm wavelength
Wide operating temperature range
(- 55¡C to +125¡C)
Ideal for high pulsed current applications
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3455/5455 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3455 series has flat window cans
providing a wide beam angle, while the SE5455 series
has glass lensed cans providing a narrow beam angle.
These devices are constructed with dual bond wires
suitable for pulsed current applications. The TO-46
packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3455
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.048(1.22)
2
.015
(0.36)
.153 (3.89)
.140 (3.56)
.028(.71)
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_005a.ds4
SE5455
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
DIM_005b.ds4
.015
(0.36)
.200
5.08
.048(1.22)
.028(.71)
2
.018 DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
h Honeywell reserves the right to make
28 changes in order to improve design and
supply the best products possible.
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SE3455 Даташит, Описание, Даташиты
SE3455/5455
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Peak Forward Current
3A
(1µs pulse width, 300 pps)
Power Dissipation
150 mW [À]
Operating Temperature Range
-55¡C to 125¡C
Storage Temperature Range
-65¡C to 150¡C
Soldering Temperature (10 sec)
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.43 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
29









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SE3455 Даташит, Описание, Даташиты
SE3455/5455
GaAs Infrared Emitting Diode
Fig. 1 Radiant Intensity vs
Angular Displacement (SE3455)
gra_017.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Angular displacement - degrees
Fig. 3 Radiant Intensity vs
Forward Current
250
Pulsed
200
gra_018.ds4
150
100
50
0.0
0
100 200 300 400
Forward current - mA
500
Fig. 5 Forward Voltage vs
Temperature
1.35
gra_020.ds4
1.33
1.31
1.29
1.27
1.25 IF=100 mA
1.23
1.21
-30 -10
10 30 50 70
Temperature - °C
90
Fig. 2 Radiant Intensity vs
Angular Displacement (SE5455)
gra_023.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Angular displacement - degrees
Fig. 4 Forward Voltage vs
Forward Current
gra_019.ds4
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0
20 40 60 80
Forward current - mA
100
Fig. 6 Spectral Bandwidth
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
870 890 910 930 950 970
Wavelength - nm
gra_005.ds4
990 1010
h Honeywell reserves the right to make
30 changes in order to improve design and
supply the best products possible.










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Номер в каталогеОписаниеПроизводители
SE3455GaAs Infrared Emitting DiodeHoneywell
Honeywell

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