CE1F3P PDF даташит
Спецификация CE1F3P изготовлена «NEC» и имеет функцию, называемую «on-chip resistor NPN silicon epitaxial transistor For mid-speed switching». |
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Детали детали
Номер произв | CE1F3P |
Описание | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
Производители | NEC |
логотип |
4 Pages
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The CE1F3P is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter and zener diode
in collector to base as protect elements. This transistor is ideal for
actuator drives of OA equipments and electric equipments.
FEATURES
• On-chip zener diode for surge voltage absorption
• On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ
• Low power consumption during driving:
VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A
• On-chip dumper diode for reverse cable
* PW≤10 ms, duty cycle≤50 %
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse) *
IB(DC)
PT
Tj
Tstg
Ratings
60±10
60±10
15
±2.0
±3.0
0.03
1.0
150
−55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Colletor to emitter voltage
VCEO(SUS) IC = 2.0 A, IB = 5.0 Ma, L = 6.0 mH
Collector cutoff current
ICBO VCB = 40 V, IE = 0
DC current gain
hFE1 ** VCE = 5.0 V, IC = 0.2 A
DC current gain
hFE2 ** VCE = 5.0 V, IC = 1.0 A
DC current gain
hFE3 ** VCE = 5.0 V, IC = 2.0 A
Low level output voltage
VOL ** VI = 5.0 V, IC = 0.5 A
Low level input voltage
VIL ** VCE = 12 V, IC = 100 µA
Input resistance 1
R1
Input resistance 2
R2
Turn-on time
Storage time
Fall time
ton IC = 1.0 A
tstg IBI = −IB2 = 10 mA
tf VCC = 20 V, RL = 20 Ω
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
MIN.
50
700
1000
500
1.54
7.0
TYP.
60
1200
1600
1200
0.12
0.5
2.2
10.0
0.4
1.4
0.5
MAX.
100
3000
0.3
0.4
2.86
13.0
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Unit
V
nA
−
−
−
V
V
kΩ
kΩ
µs
µs
µs
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©
21090928
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TYPICAL CHARACTERISTICS (Ta = 25°C)
CE1F3P
2 Data Sheet D16178EJ1V0DS
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CE1F3P
Data Sheet D16178EJ1V0DS
3
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Номер в каталоге | Описание | Производители |
CE1F3P | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | NEC |
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DataSheet26.com | 2020 | Контакты | Поиск |