CE1N2R PDF даташит
Спецификация CE1N2R изготовлена «NEC» и имеет функцию, называемую «on-chip resistor NPN silicon epitaxial transistor For mid-speed switching». |
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Детали детали
Номер произв | CE1N2R |
Описание | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
Производители | NEC |
логотип |
4 Pages
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DATA SHEET
COMPOUND TRANSISTOR
CE1N2R
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The CE1N2R is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter and zener diode
in collector to base as protect elements. This transistor is ideal for
actuator drives of OA equipments and electric equipments.
FEATURES
• On-chip zener diode for surge voltage absorption
• On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ
• Low power consumption during driving:
VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A
• On-chip dumper diode for reverse cable
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (Pulse)
IC(pulse) *
Base current (DC)
IB(DC)
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50 %
Ratings
60±10
60±10
15
±2.0
±3.0
0.03
1.0
150
−55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10846EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Colletor to emitter voltage
VCEO(SUS) IC = 2.0 A, IB = 5.0 mA, L = 6.0 mH
Collector cutoff current
ICBO VCB = 40 V, IE = 0
DC current gain
hFE1 ** VCE = 5.0 V, IC = 0.2 A
DC current gain
hFE2 ** VCE = 5.0 V, IC = 1.0 A
DC current gain
hFE3 ** VCE = 5.0 V, IC = 2.0 A
Low level output voltage
Low level input voltage
VOL **
VIL **
VI = 5.0 V, IC = 0.5 A
VCE = 12 V, IC = 100 µA
Input resistance
R1
E-to-B resistance
R2
Turn-on time
Storage time
Fall time
ton IC = 1.0 A
tstg IBI = −IB2 = 10 mA
tf VCC = 20 V, RL = 20 Ω
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
CE1N2R
MIN.
50
700
1000
500
476
7.0
TYP.
60
1200
1700
1300
0.12
0.43
680
10.0
0.4
1.4
0.5
MAX.
100
3000
0.3
0.4
884
13.0
Unit
V
nA
−
−
−
V
V
Ω
kΩ
µs
µs
µs
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC sales representative.
2 Data Sheet D10846EJ2V0DS
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CE1N2R
Data Sheet D10846EJ2V0DS
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Номер в каталоге | Описание | Производители |
CE1N2R | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | NEC |
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