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PDF NTF3N08 Data sheet ( Hoja de datos )

Número de pieza NTF3N08
Descripción 80V Power MOSFET
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! NTF3N08 Hoja de datos, Descripción, Manual

( DataSheet : www.DataSheet4U.com )
NTF3N08, NTF3N08L
Product Preview
80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on–resistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
alternator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor’s latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown
Voltage
V(BR)DSS
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 80 Vdc, VGS = 0 Vdc)
(VDS = 80 Vdc, VGS = 0 Vdc,
TJ =150°C)
IDSS
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
80
Vdc
––
µAdc
– 1.0
– 10
nAdc
±100
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
NTF3N08
NTF3N08L
VGS(th)
Vdc
2.0 3.0 4.0
1.0 1.5 2.0
Static Drain–to–Source
On–Resistance
(ID = 1.5 Adc)
NTF3N08, VGS= 10 V
NTF3N08L, VGS = 5 V
RDS(on)
m
– 140
– 155
http://onsemi.com
3 AMPERES
3N08 Typ RDS(on) = 140 m
3N08L Typ RDS(on) = 155 m
SOT–223
CASE 318E
STYLE 3
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
www.D© aSteamSichoenedut4ctUor.Ccoommponents Industries, LLC, 2000
October, 2000 – Rev. 0
1
www.DataSheet4U.com
Publication Order Number:
NTF3N08/D

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