DataSheet26.com

8P2SMA PDF даташит

Спецификация 8P2SMA изготовлена ​​​​«NEC» и имеет функцию, называемую «8A MOLD ISOLATED SCR».

Детали детали

Номер произв 8P2SMA
Описание 8A MOLD ISOLATED SCR
Производители NEC
логотип NEC логотип 

6 Pages
scroll

No Preview Available !

8P2SMA Даташит, Описание, Даташиты
DATA SHEET
THYRISTORS
8P2SMA,8P4SMA
8 A MOLD ISOLATED SCR
DESCRIPTION
The 8P2SMA and 8P4SMA are P gate all diffused mold type
thyristor granted 8 A on-state average current (TC = 88°C), with
rated voltages up to 400 V.
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 ±0.2 φ 3.2 ±0.2
4.7 MAX.
3.0 MAX.
FEATURES
Mold isolated plastic package
100 A surge current
High voltage: VDRM, VRRM = 200 V (8P2SMA)
VDRM, VRRM = 400 V (8P4SMA)
1 23
*
APPLICATIONS
Motor speed control for household appliance
Temperature control for heater and constant temperature box
Constant voltage power source and battery charger
Automotive application such as regulator
Various solid state relay, etc.
0.8 ±0.1
2.54 TYP.
1.3 ±0.2 0.5 ±0.1
1.5 ±0.2
2.54 TYP. SCR
2.5 ±0.1
1: Cathode
2: Anode
3: Gate
*: TC test bench-mark
Standard weight: 2 g
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17164EJ3V0DS00 (3rd edition)
(Previous No. SC-2102)
Date Published June 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
1988









No Preview Available !

8P2SMA Даташит, Описание, Даташиты
8P2SMA,8P4SMA
MAXIMUM RATINGS
Parameter
Non-repetitive Peak Reverse Voltage
Non-repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Off-state Voltage
Average On-state Current
Effective On-state Current
Surge On-state Current
Symbol
VRSM
VDSM
VRRM
VDRM
IT(AV)
IT(RMS)
ITSM
Fusing Current
Critical Rate Rise of On-state Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Forward Current
Peak Gate Reverse Voltage
Junction Temperature
Storage Temperature
iT2dt
dIT/dt
PGM
PG(AV)
IFGM
VRGM
Tj
Tstg
8P2SMA
8P4SMA
300 500
300 500
200 400
200 400
8 (TC = 88°C, single phase half wave, θ = 180°)
12.6
100 (f = 50 Hz, sine half wave, 1 cycle)
110 (f = 60 Hz, sine half wave, 1 cycle)
45 (1 ms t 10 ms)
50
5 (f 50 Hz, Duty 10%)
0.5
2 (f 50 Hz, Duty 10%)
10
40+125
55+150
Unit Remarks
V
V
V
V
A Refer to Figure 11
A and 12.
A Refer to Figure 2.
A2s
A/µs
W
W
A
V
°C
°C
Refer to Figure 3.
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Parameter
Symbol
Conditions
MIN. TYP. MAX. Unit
Remarks
Repetitive Peak Reverse Current
Repetitive Peak Off-state Current
On-state Voltage
Gate Trigger Current
Gate Trigger Voltage
Gate Non-trigger Voltage
IRRM
IDRM
VTM
IGT
VGT
VGD
VRM = VRRM
Tj = 25°C
Tj = 125°C
VDM = VDRM
Tj = 25°C
Tj = 125°C
ITM = 25 A
VDM = 6 V, RL = 100
VDM = 6 V, RL = 100
Tj = 125°C, VDM =
1
2
VDRM
− − 100 µ A
− − 2 mA
− − 100 µ A
− − 2 mA
− − 1.4 V Refer to Figure 1.
− − 10 mA Refer to Figure 4.
− − 1.5 V
0.2 − − V
Holding Current
Critical Rate Rise of Off-state Voltage
IH
dv/dt
VDM = 24 V, ITM = 25 A
Tj = 125°C, VDM =
2
3
VDRM
6 mA
40 Vs
Circuit Commuted Turn-off Time
Thermal Resistance Note
tq
Rth(j-c)
Rth(j-a)
Tj = 125°C, ITM = 8 A
diR/dt = 15 A/µs, VR 25 V,
VDM =
2
3
VDRM, dVD/dt = 10 V/µs
Junction to case DC
Junction to ambient DC
100
µs
3.7 °C/W Refer to Figure 13.
60 °C/W
2 Data Sheet D17164EJ3V0DS









No Preview Available !

8P2SMA Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS
Figure 1. iT vs. νT CHARACTERISTIC
100
MAX.
10
Tj = 125˚C
1
0
25˚C
1
2
νT - On-state Voltage - V
3
Figure 3. GATE RATING
10 Tj = 40 to
+125˚C
8
PGM = 5 W
6 f 50 Hz
Duty 10%
4
PG(AV) = 0.5 W
2
0
0 1.0 2.0
IFG - Gate Forward Current - A
Figure 5. IGT vs. TA CHARACTERISTIC
100
8P2SMA,8P4SMA
140
120
100
80
60
40
20
0
1
Figure 2. ITSM RATING
Initial Tj = 125˚C
ITSM
10 ms
20 ms
60 Hz
50 Hz
5 10
N - Cycles
50 100
Figure 4. GATE CHARACTERISTIC
5
VDM = 6 V
RL = 100
4
3
Tj = 40˚C
2
0˚C
25˚C
1
0
0 5 10 15 20 25 30
IGT - Gate Trigger Current - mA
Figure 6. VGT vs. TA CHARACTERISTIC
2.0
10
1.0
1
0.1
40
20 0 20 40 60 80
TA - Ambient Temperature - °C
100
0
40
20 0 20 40 60 80
TA - Ambient Temperature - °C
100
Data Sheet D17164EJ3V0DS
3










Скачать PDF:

[ 8P2SMA.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
8P2SMA8A MOLD ISOLATED SCRNEC
NEC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск