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SDM9433 PDF даташит

Спецификация SDM9433 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв SDM9433
Описание P-Channel Enhancement Mode MOSFET
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDM9433 Даташит, Описание, Даташиты
( DataSheet : www.DataSheet4U.com )
S DM9433
S amHop Microelectronics C orp.
March , 2003
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
VDS S
ID R DS (ON) ( m W ) MAX
-20V
-5.4A
45 @ VGS = -4.5V
70 @ VGS = -2.7V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
DDDD
8 7 65
S O-8
1
1 234
S SS G
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
12
5.4
20
2.6
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
50
C /W
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SDM9433 Даташит, Описание, Даташиты
S DM9433
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -20
V
Zero Gate Voltage Drain Current IDSS VDS =-16V, VGS =0V
-1 uA
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 12V, VDS =0V
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -0.7
V
Drain-S ource On-S tate R esistance R DS(ON)
VGS = -4.5V, ID = -5.1A
VGS = -2.7V, ID = -2.0A
45 m-ohm
70 m-ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = -5V, VGS = -4.5V
VDS =-15V, ID = - 5.3A
-20
13
A
S
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
VDS =-10V, VGS = 0V
f =1.0MHZ
1190 PF
710 PF
260 PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON) VD = -10V,
tr
ID = -1A,
VGEN = -4.5V,
tD(OFF) R GEN = 6 -ohm
20 40 ns
18 70 ns
50 120 ns
Fall Time
tf
29 140 ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg
VDS =-10V, ID = -1A,
Qgs VGS =-4.5V
Qgd
20 25 nC
4 nC
4.3 nC
2









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SDM9433 Даташит, Описание, Даташиты
S DM9433
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD VGS = 0V, Is =-5.3A
Min Typ C Max Unit
-0.89 -1.2 V
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
25
20
-V GS =10,9,8,7,6,5,4,3V
15
10
-V G S =2V
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
-55 C
25 C
16
T j=125 C
12
8
4
0
0 0.5 1 1.5 2 2.5 3
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
3000
2500
2000
1500
1000
C is s
C oss
500
C rss
0
0 5 10 15 20
-V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
1.6
V G S =-4.5V
1.4 ID=-5.1A
1.2
1.0
0.8
0.6
0.4
-50
-25 0 25 50 75 100 125
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
5
3










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