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PDF SDM9926 Data sheet ( Hoja de datos )
| Número de pieza | SDM9926 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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( DataSheet : www.DataSheet4U.com )
S DM9926
S amHop Microelectronics C orp.
Apr,27 2005 ver1.2
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
30 @ VGS = 4.0V
20V 5 A
40 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
8 7 65
S O-8
1
1 23 4
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
10
5
25
1.7
2
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
62.5
C /W
1
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S DM9926
V DD
ton toff
5 V IN R L
D
V OUT
td(on)
tr td(off)
90%
tf
90%
VG S
VOUT
10% INVE R TE D
10%
RGEN G
90%
S
VIN 50%
50%
10%
PULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
1
Duty C ycle=0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
S ingle P uls e
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
1
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10
100
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SDM9926.PDF ] | |
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