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M1661S PDF даташит

Спецификация M1661S изготовлена ​​​​«Sanken» и имеет функцию, называемую « TM1661S».

Детали детали

Номер произв M1661S
Описание TM1661S
Производители Sanken
логотип Sanken логотип 

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M1661S Даташит, Описание, Даташиты
www.DataSheet4U.com
TO-3PF 16A Triac
TM1641B-L, TM1661B-L
s Features
qRepetitive peak off-state voltage: VDRM=400, 600V
qRMS on-state current: IT(RMS)=16A
qGate trigger current: IGT=30mA max (MODE , , )
qRate-of-rise of off-state commutation voltage: (dv/dt)c=10V/µs min.
qIsolation voltage: VISO=2000V (AC, 1min.)
qUL approved type available
External Dimensions
(Unit: mm)
3.2±0.2
5.5±0.2
3.45±0.2
a 3.35±0.2
b
5.45±0.1
1.75 +–00..12
2.15 +–00..12
1.05 +–00..12
5.45±0.1
15.6±0.2
1.5 4.4 1.5
(1) (2) (3)
0.65 +–00..12
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
a. Part Number
b. Lot Number
Weight: Approx. 6.5g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
VDRM
IT (RMS)
ITSM
VGM
IGM
PGM
PG (AV)
Tj
Tstg
VISO
Ratings
TM1641B-L TM1661B-L
400 600
16
160
10
2
5
0.5
– 40 to +125
– 40 to +125
2000
Unit
V
A
A
V
A
W
W
°C
°C
Vrms
Conditions
Conduction angle 360°, Tc=92.5°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Off-state current
On-state voltage
Symbol
IDRM
VTM
min
Gate trigger voltage
VGT
Gate trigger current
IGT
Gate non-trigger voltage
Holding current
Rate-of-rise of off-state commutation voltage
Thermal resistance
VGD
IH
(dv/dt)c
Rth
0.2
10
Ratings
typ
0.1
0.8
0.7
0.8
1.0
12
16
25
70
25
max
2.0
0.1
1.6
1.5
1.5
1.5
30
30
30
1.8
Unit
mA
V
V
mA
V
mA
V/µs
°C/W
Conditions
VD=VDRM, RGK=, Tj=125°C
VD=VDRM, RGK=, Tj=25°C
ITM=20A, TC=25°C
VD=6V, RL=10, TC=25°C
VD=6V, RL=10, TC=25°C
VD=1/2 ×VDRM, Tj=125°C
Tj=25°C
VD=400V, Tj=125°C
Junction to case
T2+, G+
T2+, G
T2, G
T2, G+
T2+, G+
T2+, G
T2, G
T2, G+
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M1661S Даташит, Описание, Даташиты
www.DataSheet4U.com
vT iT Characteristics (max)
100
Tj =125°C
10 Tj =25°C
1
0.1
0.4
0.8 1.2 1.6 2.0 2.4
On-state voltage vT ( V )
2.8
IT(RMS) – Tc Ratings
150
Full-cycle sinewave
Conduction angle :360°
125
100
75
50
25
0
0 4 8 12 16 20
RMS on-state current IT(RMS) (A)
IGT temperature characteristics
( Typical)
100
(VD=6V RL=10 )
Mode
50
10
5
1
–40 –25 0 25 50 75 100
Junction temperature Tj (°C)
125
rth(j-c) – t Characteristics
5
TM1641B-L, TM1661B-L
ITSM Ratings
180
160
140
Initial junction temperature
Tj=125°C
ITSM
10 ms
1cycle
120
100
80
60
40
20
0
1
5 10
50 100
Number of cycle
Gate Characteristics
50
Mode
10 VGM =10V
–40°C VGT=1.8V
1 25°C VGT=1.5V
PGM =5W
PG(AV) =0.5W
VGD=0.2V
0
1 10
100 1000
Gate current iGF (mA)
5000
IH temperature characteristics
( Typical)
1000
(RG-K =1k)
IT(RMS) – PT(AV) Characteristics
20
Full-cycle sinewave
Conduction angle :360°
16
12
8
4
0
0 4 8 12 16
RMS on-state current IT(RMS) (A)
VGT temperature characteristics
( Typical)
2.0
(VD=6V RL=10 )
Mode
1.6
1.2
0.8
0.4
0
–40 –25 0 25 50 75 100
Junction temperature Tj (°C)
125
IL temperature characteristics
( Typical)
1000
(RG-K= )
100 100
10
1
–40 –25 0 25 50 75 100
Junction temperature Tj (°C)
125
10
1
–40 –25 0 25 50 75 100
Junction temperature Tj (°C)
125
1
0.5
1
10 102 103 104 105
t, Time (ms)
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M1661S TM1661SSanken
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