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HN29V25611ABP PDF даташит

Спецификация HN29V25611ABP изготовлена ​​​​«Hitachi» и имеет функцию, называемую «256M AND Type Flash Memory».

Детали детали

Номер произв HN29V25611ABP
Описание 256M AND Type Flash Memory
Производители Hitachi
логотип Hitachi логотип 

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HN29V25611ABP Даташит, Описание, Даташиты
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HN29V25611ABP Series
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-1281 (Z)
Preliminary
Rev. 0.0
Aug. 10, 2001
Description
The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It
has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V25611A are more than 16,057 (98% of all
sector address) and less than 16,384 sectors.
Features
On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
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Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.









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HN29V25611ABP Даташит, Описание, Даташиты
HN29V25611ABP Serieswww.DataSheet4U.com
Erase mode
Single sector erase ((2048 + 64) byte unit)
Fast serial read access time:
First access time: 50 µs (max)
Serial access time: 50 ns (max)
Low power dissipation:
ICC1 = 2 mA (typ) (Read)
ICC2 = 20 mA (max) (Read)
ISB2 = 50 µA (max) (Standby)
ICC3/ICC4 = 40 mA (max) (Erase/Program)
ISB3 = 20 µA (max) (Deep standby)
The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (290 sectors) (min) within usable sectors
Ordering Information
Type No.
HN29V25611ABP-50
Available sector
Package
More than 16,057 sectors 72-bump 0.8 mm ball pitch CSP (TBP-72A)
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HN29V25611ABP Даташит, Описание, Даташиты
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Pin Arrangement
HN29V25611ABP Series
72-bump CSP
1 2 3 4 5 6 7 8 9 10 11 12
A NC NC
NC I/O3 I/O1 SC VSS VCC NC NC NC
NC
B
VCC
I/O2
RDY
I/O0 /Busy
NC
NC
NC
NC
C VSS I/O4 OE RES NC NC NC NC
D I/O7 I/O6 I/O5 NC NC NC NC NC
E CE WE CDE NC NC NC NC NC
F
VSS
VSS
NC
NC
NC
NC
NC
NC
G NC NC NC NC NC NC NC NC
H NC NC NC NC NC NC NC NC NC NC NC NC
(Top view)
Note: 1. Two pins of 4 corners are connected.
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Номер в каталогеОписаниеПроизводители
HN29V25611ABP256M AND Type Flash MemoryHitachi
Hitachi

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