NTE276 PDF даташит
Спецификация NTE276 изготовлена «NTE Electronics» и имеет функцию, называемую «Silicon Controlled Rectifier». |
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Детали детали
Номер произв | NTE276 |
Описание | Silicon Controlled Rectifier |
Производители | NTE Electronics |
логотип |
2 Pages
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NTE276
Silicon Controlled Rectifier (SCR)
Gate Controlled Switch
Features:
D Gate Turn−Off Thyristor
D High Speed Power Switching
D TV Horizontal Output
D Inverter and Converter Application
D Supplied in a Japanese TO66 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Non−Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), VDSM . . . . . . . . . . . 1400V
Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), VDRM . . . . . . . . . . . . . . . . 1250V
DC On−State Anode Current (TC = +60°C), IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Surge
On−State
t = 100µs
Current
.......
.(T. .C.
= +60°C),
.........
I.T.S.M.
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80A
t = 1ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33A
Peak Forward Gate Current (TC = +60°C, t = 1ms), IGFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Average Forward Gate Power Dissipation (TC = +60°C), PGF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Peak Reverse Gate Power Dissipation (TC = +60°C, t = 5µs), PGRM . . . . . . . . . . . . . . . . . . . . . 30W
Average Reverse Gate Power Dissipation (TC = +60°C), PGR(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Total Power Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47.5W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +120°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50° to +120°C
Thermal Resistance,
Typical . . . . . .
Junction−to−Case,
.................
.R.th. J.C.
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1.3°C/W
Maximum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Controllable Anode Current
On−State Voltage
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Gate Trigger Current
ITC VD = 100V, VGR = 9V, Rg = 0
VT IT = 5A, IGF = 300mA
VGT VD = 10V
IGT VD = 10V
Min Typ Max Unit
25 − − A
− − 5.3 V
− − 1.5 V
− − 120 mA
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Latching Current
Holding Current
Turn−Off Current Gain
Off−State Anode Current
Turn−On Time
Turn−Off Time
Critical rate of Rise of
Off−State Voltage
IL
IH
Goff
IDRM
td
tr
tstg
tf
dv/dt
VD = 10V
VD = 100V, IT = 25A, toff = 10µs
VD = 1000V, VGK = 0
VD = 100V, IT = 5A, IGF = 250mA
VD = 100V, IT = 5A, IGR = 9V
VDM = 1000V, VGK 0
−
−
14.7
−
−
−
−
−
1000
0.6
300
20.0
−
0.2
1.3
0.22
0.09
−
−A
− mA
−
0.5 mA
− µs
− µs
− µs
− µs
− V/µs
Gate Breakdown Voltage
V(BR)GR IGR = 10mA
9 12 − V
.562 (14.28)
Dia
.350
(8.89)
.062
(1.57)
.031 (0.78) Dia
.905 (23.0)
.516 (13.1)
.161 (4.1) Dia
(2 Places)
.141 (3.69) R
.350 (8.89) R Max
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Anode (Case)
.350
(8.89)
Min
Gate
.238
(6.04)
Cathode
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