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NTE276 PDF даташит

Спецификация NTE276 изготовлена ​​​​«NTE Electronics» и имеет функцию, называемую «Silicon Controlled Rectifier».

Детали детали

Номер произв NTE276
Описание Silicon Controlled Rectifier
Производители NTE Electronics
логотип NTE Electronics логотип 

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NTE276 Даташит, Описание, Даташиты
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NTE276
Silicon Controlled Rectifier (SCR)
Gate Controlled Switch
Features:
D Gate TurnOff Thyristor
D High Speed Power Switching
D TV Horizontal Output
D Inverter and Converter Application
D Supplied in a Japanese TO66 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
NonRepetitive Peak OffState Voltage (TJ = 40° to +120°C, VGK = 0), VDSM . . . . . . . . . . . 1400V
Repetitive Peak OffState Voltage (TJ = 40° to +120°C, VGK = 0), VDRM . . . . . . . . . . . . . . . . 1250V
DC OnState Anode Current (TC = +60°C), IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Surge
OnState
t = 100µs
Current
.......
.(T. .C.
= +60°C),
.........
I.T.S.M.
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80A
t = 1ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33A
Peak Forward Gate Current (TC = +60°C, t = 1ms), IGFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Average Forward Gate Power Dissipation (TC = +60°C), PGF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Peak Reverse Gate Power Dissipation (TC = +60°C, t = 5µs), PGRM . . . . . . . . . . . . . . . . . . . . . 30W
Average Reverse Gate Power Dissipation (TC = +60°C), PGR(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Total Power Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47.5W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +120°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50° to +120°C
Thermal Resistance,
Typical . . . . . .
JunctiontoCase,
.................
.R.th. J.C.
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1.3°C/W
Maximum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Controllable Anode Current
OnState Voltage
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Gate Trigger Current
ITC VD = 100V, VGR = 9V, Rg = 0
VT IT = 5A, IGF = 300mA
VGT VD = 10V
IGT VD = 10V
Min Typ Max Unit
25 − − A
− − 5.3 V
− − 1.5 V
− − 120 mA









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NTE276 Даташит, Описание, Даташиты
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Latching Current
Holding Current
TurnOff Current Gain
OffState Anode Current
TurnOn Time
TurnOff Time
Critical rate of Rise of
OffState Voltage
IL
IH
Goff
IDRM
td
tr
tstg
tf
dv/dt
VD = 10V
VD = 100V, IT = 25A, toff = 10µs
VD = 1000V, VGK = 0
VD = 100V, IT = 5A, IGF = 250mA
VD = 100V, IT = 5A, IGR = 9V
VDM = 1000V, VGK 0
14.7
1000
0.6
300
20.0
0.2
1.3
0.22
0.09
A
mA
0.5 mA
µs
µs
µs
µs
V/µs
Gate Breakdown Voltage
V(BR)GR IGR = 10mA
9 12 V
.562 (14.28)
Dia
.350
(8.89)
.062
(1.57)
.031 (0.78) Dia
.905 (23.0)
.516 (13.1)
.161 (4.1) Dia
(2 Places)
.141 (3.69) R
.350 (8.89) R Max
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Anode (Case)
.350
(8.89)
Min
Gate
.238
(6.04)
Cathode










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