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C5121 PDF даташит

Спецификация C5121 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5121».

Детали детали

Номер произв C5121
Описание NPN Transistor - 2SC5121
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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C5121 Даташит, Описание, Даташиты
Power Transistors
www.datasheet4u.com
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
Features
High collector-base voltage (Emitter open) VCBO
High collector-emitter voltage (Base open) VCEO
Small collector output capacitance (Common base, input open
circuited) Cob
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
400
400
7
70
100
1.2
150
55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
400
V
Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
7V
Collector-base cutoff current (Emitter open) ICBO VCB = 300 V, IE = 0
10 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 380 V, IB = 0, Ta = 80°C
10 µA
Forward current transfer ratio *
hFE VCE = 10 V, IC = 5 mA
30 100
Collector-emitter saturation voltage * VCE(sat) IC = 50 mA, IB = 5 mA
1.2 V
Transition frequency
fT VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
4 8 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00140BED
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C5121 Даташит, Описание, Даташиты
2SC5121
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PC Ta
2.4
Without heat sink
2.0
1.6
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
120
TC=25˚C
100
80
IB=1.2mA
1.0mA
0.8mA
60
0.6mA
0.4mA
40
20 0.2mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
120
VCE=10V
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
10
IC/IB=10
1
0.1
0.01
0.001
0.1
1 10
Collector current IC (mA)
100
hFE IC
104
VCE=10V
103
102
10
1
0.1 1 10 100
Collector current IC (mA)
Cob VCB
12
IE=0
f=1MHz
TC=25˚C
10
8
6
4
2
0
1 10 100 1 000
Collector-base voltage VCB (V)
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C5121 Даташит, Описание, Даташиты
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL










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